Microcrystalline and polycrystalline silicon films for solar cells obtained by gas-jet electron-beam PECVD method

2003 ◽  
Vol 150 (4) ◽  
pp. 293 ◽  
Author(s):  
R. Bilyalov ◽  
J. Poortmans ◽  
R. Sharafutdinov ◽  
S. Khmel ◽  
V. Schukin ◽  
...  
Keyword(s):  
Electron Beam ◽  
Solar Cells ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Gas Jet ◽  
Polycrystalline Silicon Films

Grain growth of polycrystalline silicon films on SiO2by cw scanning electron beam annealing

1981 ◽  
Vol 39 (8) ◽  
pp. 645-647 ◽  
Author(s):  
Kenji Shibata ◽  
Tomoyasu Inoue ◽  
Tadahiro Takigawa ◽  
Shintaro Yoshii
Keyword(s):  
Electron Beam ◽  
Grain Growth ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Scanning Electron Beam ◽  
Polycrystalline Silicon Films ◽  
Scanning Electron

Hydrogenation of Phosphorus-Doped Polycrystalline Silicon Films for Passivating Contact Solar Cells

2019 ◽  
Vol 11 (5) ◽  
pp. 5554-5560 ◽  
Author(s):  
Thien N. Truong ◽  
Di Yan ◽  
Christian Samundsett ◽  
Rabin Basnet ◽  
Mike Tebyetekerwa ◽  
...  
Keyword(s):  
Solar Cells ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Polycrystalline Silicon Films ◽  
Phosphorus Doped

Selection of Material for the Back Electrodes of Thin-Film Solar Cells Using Polycrystalline Silicon Films Formed by Flash Lamp Annealing

2010 ◽  
Vol 49 (4) ◽  
pp. 04DP04 ◽  
Author(s):  
Keisuke Ohdaira ◽  
Tomoko Fujiwara ◽  
Yohei Endo ◽  
Kazuhiro Shiba ◽  
Hiroyuki Takemoto ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Thin Film Solar Cells ◽  
Flash Lamp ◽  
Polycrystalline Silicon Films ◽  
Selection Of

Study on the Microstructure of Polycrystalline Silicon Films Treated with Line Shaped Electron Beam

2007 ◽  
Vol 544-545 ◽  
pp. 471-474
Author(s):  
L. Fu ◽  
F. Gromball ◽  
J. Müller
Keyword(s):  
Electron Beam ◽  
Energy Density ◽  
Polycrystalline Silicon ◽  
Low Cost ◽  
Silicon Layer ◽  
Nanocrystalline Silicon ◽  
Silicon Films ◽  
Capping Layer ◽  
Silicon Melt ◽  
Polycrystalline Silicon Films

Line shaped electron beam was used for the recrystallization of nanocrystalline silicon layer that had been deposited on the low cost borosilicate glass-substrate in this paper. Polycrystalline silicon films of a 20μm thickness, which are the base for a solar cell absorber, have been investigated. Tungstendisilicide (WSi2) was formed at the tungsten/silicon interface as well as grain boundaries of the silicon. WSi2 improved the wetting and adhesion of the silicon melt. The surface morphology of the film was strongly influenced by the recrystallization energy density applied. Low energy density resulted in non wetted WSi2/W areas due to the reaction between the silicon melt and the tungsten. With the increased energy, the capping layer become smooth and continuous due to the pinholes becomes fewer and smaller. Excess of the energy density led to larger voids in the capping layer, more WSi2/Si eutectic crystallites, a thinner tungsten layer, and a thicker tungstendisilicide layer.

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