Three- and five-way low loss phase combiners for power amplifier sharing in cellular networks

2006 ◽  
Vol 153 (2) ◽  
pp. 141
Author(s):  
C. Metz ◽  
T. Baras
Keyword(s):  
Cellular Networks ◽  
Power Amplifier ◽  
Low Loss

A 76–84 GHz SiGe Power Amplifier Array Employing Low-Loss Four-Way Differential Combining Transformer

2013 ◽  
Vol 61 (2) ◽  
pp. 931-938 ◽  
Author(s):  
Mury Thian ◽  
Marc Tiebout ◽  
Neil B. Buchanan ◽  
Vincent F. Fusco ◽  
Franz Dielacher
Keyword(s):  
Power Amplifier ◽  
Low Loss

scholarly journals Low-Loss Matching Network Design for Band-Switchable Multi-Band Power Amplifier

2012 ◽  
Vol E95.C (7) ◽  
pp. 1172-1181 ◽  
Author(s):  
Atsushi FUKUDA ◽  
Takayuki FURUTA ◽  
Hiroshi OKAZAKI ◽  
Shoichi NARAHASHI ◽  
Toshio NOJIMA
Keyword(s):  
Network Design ◽  
Power Amplifier ◽  
Matching Network ◽  
Low Loss ◽  
Band Power ◽  
Multi Band

High-Density, Low-loss MOS Decoupling Capacitors integrated in a GSM Power Amplifier

2003 ◽  
Vol 783 ◽  
Author(s):  
F. Roozeboom ◽  
A. Kemmeren ◽  
J. Verhoeven ◽  
E. van den Heuvel ◽  
H. Kretschman ◽  
...  
Keyword(s):  
Power Amplifier ◽  
Electrical Breakdown ◽  
High Density ◽  
Breakdown Field ◽  
Low Loss ◽  
Mos Capacitors ◽  
Decoupling Capacitors ◽  
Supply Line ◽  
Resonance Frequencies ◽  
Identical Test

ABSTRACTHigh-density MOS capacitors have been fabricated with ∼ 30 nF/mm2 specific capacitance on highly-doped Si-wafers with arrays of macropores with ∼ 2 μm diameter. Using the Bosch process [1] these pores were dry-etched to depths of ∼ 30 μm or more. The enlarged Si-surface thus obtained serves as a substrate for capacitors fabricated by fully MOS-compatible processing.Wafers were fabricated with a top electrode of poly-Si and Al and ‘ONO’ (i.e. oxide / nitride / oxide) dielectric stacks showing 7–10 MV/cm electrical breakdown field and leakage < 1 nA/mm2 @ 20 V. These wafers were thinned to 380 μm and sawn into dies, representing 40 nF capacitors. Typically low loss factors such as ESR < 50 mΩ and ESL < 20 pH and resonance frequencies of ∼ 0.1 GHz were found for 40 nF capacitor dies. Next, 40 nF dies were mounted by wire bonding on Al2O3 or laminate substrate as supply-line decoupling capacitors in complete GSM power amplifier test modules. RF decoupling and transmission were measured and compared to identical test modules with conventional discrete ceramic capacitors. The MOS capacitors showed very efficient decoupling, resulting in superior signal stability as measured in the 0 – 1 GHz range (less noisy, free from oscillations).The new capacitor is very suitable for integrated decoupling purposes, e.g. supply-line decoupling in RF wireless communication and analog and mixed-signal systems.

An X-band GaN HEMT hybrid power amplifier with low-loss Wilkinson division on AlN substrate

2013 ◽  
Author(s):  
G. Christopher Barisich ◽  
Spyridon Pavlidis ◽  
Carlos A. Donado Morcillo ◽  
Outmane Lemtiri Chlieh ◽  
John Papapolymerou ◽  
...  
Keyword(s):  
Power Amplifier ◽  
Low Loss ◽  
Hybrid Power ◽  
Gan Hemt ◽  
X Band

Highly Linear and Highly Efficient Dual-Carrier Power Amplifier Based on Low-Loss RF Carrier Combiner

2014 ◽  
Vol 62 (3) ◽  
pp. 590-599 ◽  
Author(s):  
Kenle Chen ◽  
Eric J. Naglich ◽  
Yu-Chen Wu ◽  
Dimitrios Peroulis
Keyword(s):  
Power Amplifier ◽  
Low Loss ◽  
Highly Efficient

Receiver-aided predistortion of power amplifier non-linearities in cellular networks

2012 ◽  
Vol 6 (3) ◽  
pp. 168 ◽  
Author(s):  
J. Zeleny ◽  
C. Dehos ◽  
P. Rosson ◽  
A. Kaiser
Keyword(s):  
Cellular Networks ◽  
Power Amplifier

GSM timeslot detection and switching for power amplifier duty cycling in community cellular networks

2017 ◽  
Author(s):  
Adrian Vidal ◽  
Miguel Carlo Purisima ◽  
Maria Theresa Perez ◽  
Cedric Angelo Festin ◽  
Matthew Podolsky ◽  
...  
Keyword(s):  
Cellular Networks ◽  
Power Amplifier ◽  
Duty Cycling
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