High drain-current-density and high breakdown-field Al0.36Ga0.64N-channel heterojunction filed-effect transistors with a dual AlN/AlGaInN barrier layer

In this study, we fabricated and characterized heterojunction field-effect transistors (HFETs) based on an Al0.36Ga0.64N-channel heterostructure with a dual AlN/AlGaInN barrier layer. The device fabrication was accomplished by adopting a regrown n++-GaN layer for ohmic contacts. The fabricated HFETs with a gate length of 2 μm and a gate-to-drain distance of 6 μm exhibited an on-state drain current density as high as approximately 270 mA/mm and an off-state breakdown voltage of approximately 1 kV, which corresponds to an off-state critical electric field of 166 V/μm. This breakdown field, as a comparison in devices without field-plate electrodes, reaches approximately four-fold higher than that for conventional GaN-channel HFETs and was considered quite reasonable as an Al0.36Ga0.64N-channel transistor. It was also confirmed that the devices adopting the dual AlN/AlGaInN barrier layer showed approximately one order of magnitude smaller gate leakage currents than those for devices without the top AlN barrier layer.

Analyses of defect distributions in ZnO varistors based on the Jonscher’s universal power law and the Dissado–Hill model

The defect distributions in ZnO varistors mixed with Bi2O3, NiO, MnCO3, Co2O3, and SiO2 after doping Sb2O3 were investigated, based on the Jonscher’s universal power law and the Dissado–Hill model. The microstructures were investigated using x-ray diffractometer, scanning electron microscope, energy dispersive spectrometer, and x-ray photoelectron spectrometer. The capacitance–voltage (C–V) method was utilized to obtain the parameters of the double Schottky barrier. The dielectric spectra were analyzed to extract the parameters of defect distribution. The current density–electric field (J–E) characteristics were measured to obtain the parameters of electrical properties. We found that with increasing Sb2O3 content, the ZnO grain size distribution become more homogeneous in the Sb2O3-doped ZnO varistors; the density Zn i × is decreased; except for less homogeneous V O × , more homogeneous distributions of Zn i ∙ in the depletion layers and the extrinsic defects at the interfaces are achieved in the Sb2O3-doped ZnO varistors. Therefore, the enhancement in the electrical properties was achieved by doping Sb2O3 due to the increased number of active grain boundaries per unit volume, i.e. the increased breakdown field and nonlinear coefficient, and the decreased leakage current density. The results of this study suggest that the Jonscher’s universal power law and the Dissado–Hill model can be effectively used to analyze defect distributions in varistor ceramics.

The Nanosecond Impulsive Breakdown Characteristics of Air, N2 and CO2 in a Sub-mm Gap

The present paper investigates the breakdown characteristics—breakdown voltage, with breakdown occurring on the rising edge of the applied HV impulses, and time to breakdown—for gases of significance that are present in the atmosphere: air, N2 and CO2. These breakdown characteristics have been obtained in a 100 µm gap between an HV needle and plane ground electrode, when stressed with sub-µs impulses of both polarities, with a rise time up to ~50 ns. The scaling relationships between the reduced breakdown field Etip/N and the product of the gas number density and inter-electrode gap, Nd, were obtained for all tested gases over a wide range of Nd values, from ~1020 m−2 to ~1025 m−2. The breakdown field-time to breakdown characteristics obtained at different gas pressures are presented as scaling relationships of Etip/N, Nd, and Ntbr for each gas, and compared with data from the literature.

Controlled synthesis of tungsten trioxide with globular clusters constructed of nanoplates by rapid breakdown anodization

Herein, the electrochamical synthesis of tungsten trioxide (WO3·H2O) with globular clusters constructed of nanoplates is demonstrated. On applying a breakdown anodization potential of 25 V at 50 °C, tungsten foil anode is efficiently electro-oxidized into WO3 globular clusters constructed of nanoplates powder, instead of a thin film structure as conventional anodization occurs. The resulting globular clusters were characterized using SEM, TEM, and XRD. The effect of the composition of electrolyte on the breakdown anodization of the W substrate is discussed. And we suggest that the growth of the nanoplates is initiated by localized anodic dielectric breakdown, followed by a effectively crystal growth in electrolyte at high breakdown field.

Control and understanding of metal contacts to β-Ga2O3 single crystals: a review

Gallium oxide (Ga2O3) is a promising semiconductor for high power devices and solar blind ultraviolet photodetectors due to its large bandgap, a high breakdown field, and high thermal stability. Recently, a considerable achievement has been obtained for the growth of high-quality β-Ga2O3 and high performance β-Ga2O3 based devices. However, rapid advance in device performance can be limited by the critical issues of metal contacts to β-Ga2O3 such as barrier height, leakage current, ohmic contact, and surface, interfacial and deep states. This article aims to provide a review on the recent studies in the control and understanding of metal contacts to β-Ga2O3, particularly in terms of the barrier formation. This review suggests that understanding the current transport mechanisms of metal contacts to β-Ga2O3 more thoroughly is necessary to enhance the performance, stability and reliability of β-Ga2O3 based devices.

Deep Insight into the Influences of the Intrinsic Properties of Dielectric Elastomer on the Energy-Harvesting Performance of the Dielectric Elastomer Generator

The dielectric elastomer (DE) generator (DEG), which can convert mechanical energy to electrical energy, has attracted considerable attention in the last decade. Currently, the energy-harvesting performances of the DEG still require improvement. One major reason is that the mechanical and electrical properties of DE materials are not well coordinated. To provide guidance for producing high-performance DE materials for the DEG, the relationship between the intrinsic properties of DE materials and the energy-harvesting performances of the DEG must be revealed. In this study, a simplified but validated electromechanical model based on an actual circuit is developed to study the relationship between the intrinsic properties of DE materials and the energy-harvesting performance. Experimental verification of the model is performed, and the results indicate the validity of the proposed model, which can well predict the energy-harvesting performances. The influences of six intrinsic properties of DE materials on energy-harvesting performances is systematically studied. The results indicate that a high breakdown field strength, low conductivity and high elasticity of DE materials are the prerequisites for obtaining high energy density and conversion efficiency. DE materials with high elongation at break, high permittivity and moderate modulus can further improve the energy density and conversion efficiency of the DEG. The ratio of permittivity and the modulus of the DE should be tailored to be moderate to optimize conversion efficiency (η) of the DEG because using DE with high permittivity but extremely low modulus may lead to a reduction in η due to the occurrence of premature “loss of tension”.

Preparation of Polyimide Films with Ultra-Low Dielectric Constant by Phase Inversion

Due to the high value of its dielectric constant, polyimide does not meet the requirements of the development of integrated circuits and high-frequency printed circuits. The development of novel low dielectric constant polyimide materials for the preparation of flexible copper clad laminates is of theoretical and practical significance in the application of polyimide for 5G communications. In this work, different fluorinated graphene/polyamic acids (FG/PAA) were used as the precursor, and the porous polyimide film was successfully prepared by phase inversion. The dielectric constant of the porous polyimide film is relatively low, being less than 1.7. When the content of fluorinated graphene is 0.5 wt%, the overall dielectric performance of the porous film is the best, with a dielectric constant of 1.56 (10 kHz) and a characteristic breakdown field strength of 56.39 kV/mm. In addition, the mechanical properties of the film are relatively poor, with tensile strengths of 13.87 MPa (0.2 wt%), 13.61 MPa (0.5 wt%), and 6.25 MPa (1.0 wt%), respectively. Therefore, further improving the breakdown resistance and mechanical properties of the porous film is essential for the application of porous ultra-low dielectric polyimide materials.

Stable Field Emission from Vertically Oriented SiC Nanoarrays

Silicon carbide (SiC) nanostructure is a type of promising field emitter due to high breakdown field strength, high thermal conductivity, low electron affinity, and high electron mobility. However, the fabrication of the SiC nanotips array is difficult due to its chemical inertness. Here we report a simple, industry-familiar reactive ion etching to fabricate well-aligned, vertically orientated SiC nanoarrays on 4H-SiC wafers. The as-synthesized nanoarrays had tapered base angles >60°, and were vertically oriented with a high packing density >107 mm−2 and high-aspect ratios of approximately 35. As a result of its high geometry uniformity—5% length variation and 10% diameter variation, the field emitter array showed typical turn-on fields of 4.3 V μm−1 and a high field-enhancement factor of ~1260. The 8 h current emission stability displayed a mean current fluctuation of 1.9 ± 1%, revealing excellent current emission stability. The as-synthesized emitters demonstrate competitive emission performance that highlights their potential in a variety of vacuum electronics applications. This study provides a new route to realizing scalable field electron emitter production.