Small Signal Microwave Amplifier Design

Author(s):  
Grosch
1993 ◽  
pp. 199-231
Author(s):  
Norm Dye ◽  
Helge Granberg

2008 ◽  
pp. 125-168
Author(s):  
Christopher Bowick ◽  
John Blyler ◽  
Cheryl Ajluni

2020 ◽  
Vol 1499 ◽  
pp. 012033
Author(s):  
A A Popov ◽  
D V Bilevich ◽  
A A Metel ◽  
A S Salnikov ◽  
I M Dobush ◽  
...  

1982 ◽  
Vol 70 (5) ◽  
pp. 526-526
Author(s):  
J.W. Gewartowski

Author(s):  
Chin Guek Ang

This chapter discusses the design of MMIC power amplifiers for wireless application by using 0.15 µm GaAs Power Pseudomorphic High Electron Mobility Transistor (PHEMT) technology with a gate width of 100 µm and 10 fingers at 2.4 GHz and 3.5 GHz. The design methodology for power amplifier design can be broken down into three main sections: architecture design, small-signal design, and large-signal optimization. For 2.4 GHz power amplifier, with 3.0 V drain voltage, the amplifier has achieved 17.265 dB small-signal gain, input and output return loss of 16.310 dB and 14.418 dB, 14.862 dBm 1-dB compression power with 12.318% power-added efficiency (PAE). For 3.5GHz power amplifier, the amplifier has achieved 14.434 dB small-signal gain, input and output return loss of 12.612 dB and 11.746 dB, 14.665 dBm 1-dB compression power with 11.796% power-added efficiency (PAE). The 2.4 GHz power amplifier can be applied for Wireless LAN applications such as WiFi and WPAN whereas 3.5 GHz power amplifier for WiMax base station.


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