The Design and Modeling of 2.4 and 3.5 GHz MMIC PA

2012 ◽  
pp. 105-156
Author(s):  
Chin Guek Ang
Keyword(s):  
Power Amplifier ◽  
Wireless Lan ◽  
Return Loss ◽  
High Electron Mobility Transistor ◽  
Small Signal Gain ◽  
Small Signal ◽  
Signal Gain ◽  
Power Added Efficiency ◽  
Input And Output ◽  
Amplifier Design

This chapter discusses the design of MMIC power amplifiers for wireless application by using 0.15 µm GaAs Power Pseudomorphic High Electron Mobility Transistor (PHEMT) technology with a gate width of 100 µm and 10 fingers at 2.4 GHz and 3.5 GHz. The design methodology for power amplifier design can be broken down into three main sections: architecture design, small-signal design, and large-signal optimization. For 2.4 GHz power amplifier, with 3.0 V drain voltage, the amplifier has achieved 17.265 dB small-signal gain, input and output return loss of 16.310 dB and 14.418 dB, 14.862 dBm 1-dB compression power with 12.318% power-added efficiency (PAE). For 3.5GHz power amplifier, the amplifier has achieved 14.434 dB small-signal gain, input and output return loss of 12.612 dB and 11.746 dB, 14.665 dBm 1-dB compression power with 11.796% power-added efficiency (PAE). The 2.4 GHz power amplifier can be applied for Wireless LAN applications such as WiFi and WPAN whereas 3.5 GHz power amplifier for WiMax base station.

Optimization of InP DHBT stacked-transistors for millimeter-wave power amplifiers

2018 ◽  
Vol 10 (9) ◽  
pp. 999-1010 ◽  
Author(s):  
Michele Squartecchia ◽  
Tom K. Johansen ◽  
Jean-Yves Dupuy ◽  
Virginio Midili ◽  
Virginie Nodjiadjim ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Output Power ◽  
Heterojunction Bipolar Transistors ◽  
Power Amplifiers ◽  
Small Signal Gain ◽  
Small Signal ◽  
Large Signal ◽  
Signal Gain ◽  
Power Added Efficiency ◽  
Saturated Output Power

AbstractIn this paper, we report the analysis, design, and implementation of stacked transistors for power amplifiers realized on InP Double Heterojunction Bipolar Transistors (DHBTs) technology. A theoretical analysis based on the interstage matching between all the single transistors has been developed starting from the small-signal equivalent circuit. The analysis has been extended by including large-signal effects and layout-related limitations. An evaluation of the maximum number of transistors for positive incremental power and gain is also carried out. To validate the analysis, E-band three- and four-stacked InP DHBT matched power cells have been realized for the first time as monolithic microwave integrated circuits (MMICs). For the three-stacked transistor, a small-signal gain of 8.3 dB, a saturated output power of 15 dBm, and a peak power added efficiency (PAE) of 5.2% have been obtained at 81 GHz. At the same frequency, the four-stacked transistor achieves a small-signal gain of 11.5 dB, a saturated output power of 14.9 dBm and a peak PAE of 3.8%. A four-way combined three-stacked MMIC power amplifier has been implemented as well. It exhibits a linear gain of 8.1 dB, a saturated output power higher than 18 dBm, and a PAE higher than 3% at 84 GHz.

Toward a zero small‐signal gain laser power amplifier

1974 ◽  
Vol 25 (10) ◽  
pp. 602-605 ◽  
Author(s):  
G. T. Schappert ◽  
E. E. Stark
Keyword(s):  
Power Amplifier ◽  
Laser Power ◽  
Small Signal Gain ◽  
Small Signal ◽  
Signal Gain

scholarly journals 0.5 GHz-1.5 GHz Bandwidth 10W GaN HEMT RF Power Amplifier Design

2018 ◽  
Vol 8 (3) ◽  
pp. 1837
Author(s):  
Shiva Ghandi Isma Ilamaran ◽  
Zubaida Yusoff ◽  
Jahariah Sampe
Keyword(s):  
Power Amplifier ◽  
Communication Technology ◽  
Rf Power ◽  
Power Added Efficiency ◽  
Rf Power Amplifier ◽  
Gan Hemt ◽  
Input And Output ◽  
Flat Gain ◽  
Amplifier Design ◽  
Load Pull

With the current development in wireless communication technology, the need for a wide bandwith in RF power amplifier (RF PA) is an essential. In this paper, the design and simulation of 10W GaN HEMT wideband RF PA will be presented. The Source-Pull and Load-Pull technique was used to design the input and output matching network of the RF PA. From the simulation, the RF PA achieved a flat gain between 15dB to 17dB from 0.5GHz to 1.5GHz. At 1.5GHz, the drain efficiency is simulated to achieve 36% at the output power of 40 dBm while the power added efficiency (PAE) was found to be 28.2%.

Toward a laser power amplifier with zero small signal gain

1974 ◽  
Vol 10 (9) ◽  
pp. 690-691
Author(s):  
G. Schappert ◽  
F. Harrison ◽  
W. Reichelt ◽  
E. Stark
Keyword(s):  
Power Amplifier ◽  
Laser Power ◽  
Small Signal Gain ◽  
Small Signal ◽  
Signal Gain

scholarly journals Improvement of Small Signal Equivalent Simulations for Power and Efficiency Matching of GaN HEMTs

Electronics ◽  
2021 ◽  
Vol 10 (3) ◽  
pp. 263
Author(s):  
Roberto Quaglia
Keyword(s):  
Power Amplifier ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Large Signal ◽  
Signal Model ◽  
Or Efficiency ◽  
Summary Table ◽  
Matching Networks ◽  
Amplifier Design ◽  
Frequency Power

In high-frequency power-amplifier design, it is common practice to approach the design of reactive matching networks using linear simulators and targeting a reflection loss limit (referenced to the target impedance). It is well known that this is only a first-pass design technique, since output power or efficiency contours do not correspond to mismatch circles. This paper presents a method to improve the accuracy of this approach in the case of matching network design for power amplifiers based on gallium nitride (GaN) technology. Equivalent mismatch circles, which lay within the power or efficiency contours targeted by the design, are analytically obtained thanks to geometrical considerations. A summary table providing the parameters to use for typical contours is provided. The technique is demonstrated on two examples of power-amplifier design on the 6–12 GHz band using the non-linear large-signal model of a GaN High Electron Mobility Transistor (HEMT).

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