small signal gain
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Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Temperature dependence of the small-signal gain of a Cr3+ and Nd3+ co-doped Y3Al5O12 ceramic

2021 ◽  
Author(s):  
Yoshiyuki Honda ◽  
Shinji Motokoshi ◽  
Takahisa Jitsuno ◽  
Kana Fujioka ◽  
Toshihiro Yamada ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Small Signal Gain ◽  
Small Signal ◽  
Signal Gain ◽  
Co Doped

Laser gain module small-signal gain increase due to suppression of parasitic generation with pump geometry optimization

Laser Physics ◽  
2020 ◽  
Vol 30 (9) ◽  
pp. 095003
Author(s):  
B D Ovcharenko ◽  
V K Bagdasarov ◽  
V V Bukin ◽  
T V Dolmatov ◽  
D D Chesalin ◽  
...  
Keyword(s):  
Geometry Optimization ◽  
Small Signal Gain ◽  
Small Signal ◽  
Signal Gain ◽  
Laser Gain ◽  
Parasitic Generation

Analysis of the Small Signal Gain of a Sheet Beam BWO With a Partially Dielectric-Loaded Nonuniform Grating

2019 ◽  
Vol 66 (9) ◽  
pp. 4022-4028 ◽  
Author(s):  
Fengzhen Zhang ◽  
Zhaochuan Zhang ◽  
Dongping Gao ◽  
Xiaoyan Wang
Keyword(s):  
Small Signal Gain ◽  
Small Signal ◽  
Signal Gain

scholarly journals A High-Efficiency K-band MMIC Linear Amplifier Using Diode Compensation

Electronics ◽  
2019 ◽  
Vol 8 (5) ◽  
pp. 487 ◽  
Author(s):  
Zhu ◽  
Chen ◽  
Huang ◽  
Wang ◽  
Yu
Keyword(s):  
Output Power ◽  
High Efficiency ◽  
Small Signal Gain ◽  
Small Signal ◽  
Third Order ◽  
Nonlinear Capacitance ◽  
Power Added Efficiency ◽  
Linear Amplifier ◽  
Enhancement Method ◽  
K Band

This paper describes the design and measured performance of a high-efficiency and linearity-enhanced K-band MMIC amplifier fabricated with a 0.15 μm GaAs pHEMT processing technology. The linearization enhancement method utilizing a parallel nonlinear capacitance compensation diode was analyzed and verified. The three-stage MMIC operating at 20–22 GHz obtained an improved third-order intermodulation ratio (IM3) of 20 dBc at a 27 dBm per carrier output power while demonstrating higher than a 27 dB small signal gain and 1-dB compression point output power of 30 dBm with 33% power added efficiency (PAE). The chip dimension was 2.00 mm × 1.40 mm.

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