Singular localised states in quasiperiodic GaAs/AlxGa1 −xAs Fibonacci superlattices

2006 ◽  
Vol 35 (2) ◽  
pp. 113-116 ◽  
Author(s):  
Z. Aziz ◽  
S. Bentata ◽  
R. Djelti
Keyword(s):  
Localised States

The energy distribution of localised states, and the mobilities of free carriers in a-Si:H, from time of flight and other measurements

1987 ◽  
Vol 97-98 ◽  
pp. 563-566 ◽  
Author(s):  
J.M. Marshall ◽  
R.A. Street ◽  
M.J. Thompson ◽  
W.B. Jackson
Keyword(s):  
Energy Distribution ◽  
Time Of Flight ◽  
Free Carriers ◽  
Localised States

Local-environment effects on localised states in III-V alloys

1984 ◽  
Vol 17 (36) ◽  
pp. 6663-6670 ◽  
Author(s):  
A A Mbaye ◽  
H Mariette
Keyword(s):  
Local Environment ◽  
Environment Effects ◽  
Localised States

Computer Modelling of Non-Equilibrium Multiple-Trapping and Hopping Transport in Amorphous Semiconductors

2005 ◽  
Vol 862 ◽  
Author(s):  
C. Main ◽  
J. M. Marshall ◽  
S. Reynolds ◽  
M.J. Rose ◽  
R. Brüggemann
Keyword(s):  
Computer Modelling ◽  
Stochastic Matrix ◽  
Computational Procedure ◽  
Amorphous Semiconductors ◽  
Extended State ◽  
Hopping Transport ◽  
Multiple Trapping ◽  
Extended States ◽  
Localised States ◽  
Gap States

AbstractIn this paper we demonstrate a simple computational procedure for the simulation of transport in a disordered semiconductor in which both multi-trapping and hopping processes are occurring simultaneously. We base the simulation on earlier work on hopping transport, which used a Monte-Carlo method. Using the same model concepts, we now employ a stochastic matrix approach to speed computation, and include also multi-trapping transitions between localised and extended states. We use the simulation to study the relative contributions of extended state conduction (with multi-trapping) and hopping conduction (via localised states) to transient photocurrents, for various distributions of localised gap states, and as a function of temperature. The implications of our findings for the interpretation of transient photocurrents are examined.

scholarly journals It's a trap! On the nature of localised states and charge trapping in lead halide perovskites

2020 ◽  
Vol 7 (2) ◽  
pp. 397-410 ◽  
Author(s):  
Handong Jin ◽  
Elke Debroye ◽  
Masoumeh Keshavarz ◽  
Ivan G. Scheblykin ◽  
Maarten B. J. Roeffaers ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Materials Science ◽  
Optoelectronic Devices ◽  
Charge Trapping ◽  
Scientific Interest ◽  
Halide Perovskites ◽  
Localised States ◽  
Halide Perovskite ◽  
Lead Halide

The recent surge of scientific interest for lead halide perovskite semiconductors and optoelectronic devices has seen a mix of materials science sub-fields converge on the same “magical” crystal structure.

scholarly journals Excited exciton and biexciton localised states in a single quantum ring

2013 ◽  
Vol 103 (17) ◽  
pp. 173106 ◽  
Author(s):  
H. D. Kim ◽  
K. Kyhm ◽  
R. A. Taylor ◽  
A. A. L. Nicolet ◽  
M. Potemski ◽  
...  
Keyword(s):  
Quantum Ring ◽  
Single Quantum ◽  
Localised States

The electronic band structure of a B2 intermetallic compound: localised states in CoGa

1982 ◽  
Vol 12 (2) ◽  
pp. 303-316 ◽  
Author(s):  
G L Whittle ◽  
G C Fletcher ◽  
P E Clark ◽  
R Cywinski
Keyword(s):  
Intermetallic Compound ◽  
Band Structure ◽  
Electronic Band Structure ◽  
Electronic Band ◽  
Localised States

Time photocurrent response and the density of localised states in disordered semiconductors

2008 ◽  
Vol 145 (5-6) ◽  
pp. 316-320 ◽  
Author(s):  
A. Merazga ◽  
M. Herbane
Keyword(s):  
Photocurrent Response ◽  
Localised States ◽  
Disordered Semiconductors

Anomalously localised states at the Anderson transition

2008 ◽  
Vol 161 (1) ◽  
pp. 233-247 ◽  
Author(s):  
K. Yakubo ◽  
H. Obuse
Keyword(s):  
Anderson Transition ◽  
Localised States
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