DETERMINATION OF MIDGAP DENSITY OF STATES IN a-Si : H USING SPACE-CHARGE-LIMITED CURRENT MEASUREMENTS

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-451-C4-454 ◽  
Author(s):  
W. den Boer
Keyword(s):  
Space Charge ◽  
Density Of States ◽  
Space Charge Limited Current ◽  
Limited Current ◽  
Space Charge Limited

Density of States in a-Si:H from SCLC and Its Application in Modeling a Vertical TFT

2001 ◽  
Vol 664 ◽  
Author(s):  
Naser Sedghi ◽  
Bill Eccleston
Keyword(s):  
Space Charge ◽  
Density Of States ◽  
Energy Levels ◽  
Thin Film Transistor ◽  
Device Simulation ◽  
Space Charge Limited Current ◽  
Trap Energy ◽  
Limited Current ◽  
Hydrogenated Amorphous ◽  
Space Charge Limited

ABSTRACTSteady-state space-charge limited current (SCLC) measurements are used to investigate the density of states (DOS) in the mobility gap of hydrogenated amorphous silicon (a-Si:H). The density of states is calculated by different methods based on both continuous DOS and discrete traps assumptions. The density of states found by the SCLC measurements is used to set the trap densities and trap energy levels to model a vertical a-Si:H thin-film transistor (TFT) using the Medici device simulation package. The effect of different sets of traps in the bulk of a-Si:H and variation of the physical dimensions of the device on the characteristics of the vertical TFT is studied. The simulation on the space-charge limited current is performed to verify the validity and accuracy of the SCLC method.

Density of states study of sputtered and evaporated a-Si: H by space-charge-limited current technique

1985 ◽  
Vol 51 (3) ◽  
pp. L33-L38 ◽  
Author(s):  
S. Gangopadhyay ◽  
S. Iselborn ◽  
H. Rübel ◽  
B. Schröder ◽  
J. Geiger
Keyword(s):  
Space Charge ◽  
Density Of States ◽  
Space Charge Limited Current ◽  
Limited Current ◽  
Current Technique ◽  
Space Charge Limited
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