PHOTOLUMINESCENCE STUDIES OF n-TYPE MODULATION DOPED AlGaAs-GaAs MULTIPLE QUANTUM WELLS IN TILTED MAGNETIC FIELDS

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-413-C5-417
Author(s):  
K. S. LEE ◽  
C. H. PERRY ◽  
W. ZHOU ◽  
J. M. WORLOCK
1985 ◽  
Vol 2 (12) ◽  
pp. 529-532
Author(s):  
Xu Zhong-ying ◽  
Xu Ji-zong ◽  
Chen Zong-gui ◽  
Zhuang Wei-hua ◽  
Xu Jun-ying ◽  
...  

1994 ◽  
Vol 358 ◽  
Author(s):  
Z.P. Wang ◽  
Z.X. Liu ◽  
H.X. Han ◽  
J.Q. Zhang ◽  
G.H. Li ◽  
...  

ABSTRACTWe have performed photoluminescence (PL) measurements at liquid nitrogen temperature under high pressure up to 5.5 GPa and in the temperature range 10-300 K at atmospheric pressure on {(ZnSe)30(ZnSe0.92Te0.08)30(ZnSe)30[(CdSe)1(ZnSe)2]9}x5 multiple quantum wells. The PL peaks, EB, E1 and Ew corresponding to the band edge luminescence in ZnSe barrier layer, the transitions from the first conduction subband to the heavy-hole subband in ZnSe0.92Te0.08 layers and [(CdSe)1(ZnSe)2]9 ultra short period superlattice quantum well (SPSLQW) layers have been observed. Experimental results show that ZnSe0.92Te0.08/ZnSe forms a type-I superlattice (SL) in contrast to the type-II ZnSe/ZnTe SL. The pressure coefficients of the EB, E1 and Ew exciton peaks have been determined as 67, 63 and 56 meV/GPa, respectively. With increasing temperature (or pressure), the E1 peak-intensity drastically decreases which is attributed to the thermal effect (or the appearance of many defects in ZnSe0.92Te0.08 under higher pressure).


1994 ◽  
Vol 201 ◽  
pp. 415-418 ◽  
Author(s):  
Shinji Kuroda ◽  
Kazutoshi Kojima ◽  
Kôji Kobayashi ◽  
Yutaka Shirai ◽  
Kôki Takita ◽  
...  

2007 ◽  
Vol 4 (2) ◽  
pp. 682-685
Author(s):  
M. Yilmaz ◽  
B. Ulug ◽  
A. Ulug ◽  
A. Cicek ◽  
N. Balkan ◽  
...  

2017 ◽  
Vol 95 (11) ◽  
Author(s):  
M. Zybert ◽  
M. Marchewka ◽  
E. M. Sheregii ◽  
D. G. Rickel ◽  
J. B. Betts ◽  
...  

1992 ◽  
Vol 46 (24) ◽  
pp. 16005-16011 ◽  
Author(s):  
V. F. Sapega ◽  
V. I. Belitsky ◽  
T. Ruf ◽  
H. D. Fuchs ◽  
M. Cardona ◽  
...  

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