Picosecond electron drift mobility measurements in hydrogenated amorphous silicon

1989 ◽  
Vol 54 (19) ◽  
pp. 1911-1913 ◽  
Author(s):  
E. A. Schiff ◽  
R. I. Devlen ◽  
H. T. Grahn ◽  
J. Tauc ◽  
S. Guha
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Drift Mobility ◽  
Electron Drift ◽  
Hydrogenated Amorphous ◽  
Electron Drift Mobility

scholarly journals Modulated photoconductivity study of electron drift mobility in amorphous silicon

2000 ◽  
Vol 87 (6) ◽  
pp. 2901-2909 ◽  
Author(s):  
K. Hattori ◽  
M. Iida ◽  
T. Hirao ◽  
H. Okamoto
Keyword(s):  
Amorphous Silicon ◽  
Drift Mobility ◽  
Electron Drift ◽  
Electron Drift Mobility

Drift mobility under single and double injection in hydrogenated amorphous silicon

1988 ◽  
Vol 57 (6) ◽  
pp. 715-720 ◽  
Author(s):  
L. Xu ◽  
G. Winborne ◽  
M. Silver ◽  
V. Cannella ◽  
J. Mcgill
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Drift Mobility ◽  
Double Injection ◽  
Hydrogenated Amorphous

scholarly journals Hole Drift Mobility Measurements on a-Si:H using Surface and Uniformly Absorbed Illumination

2009 ◽  
Vol 1153 ◽  
Author(s):  
Steluta Adriana Dinca ◽  
Eric A Schiff ◽  
Subhendu Guha ◽  
Baojie Yan ◽  
Jeff Yang
Keyword(s):  
Stainless Steel ◽  
Solar Cells ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Time Of Flight ◽  
Drift Mobility ◽  
Electrode Interface ◽  
Steel Substrates ◽  
Hydrogenated Amorphous ◽  
Time Of Flight Method

AbstractThe standard, time-of-flight method for measuring drift mobilities in semiconductors uses strongly absorbed illumination to create a sheet of photocarriers near an electrode interface. This method is problematic for solar cells deposited onto opaque substrates, and in particular cannot be used for hole photocarriers in hydrogenated amorphous silicon (a Si:H) solar cells using stainless steel substrates. In this paper we report on the extension of the time-of-flight method that uses weakly absorbed illumination. We measured hole drift-mobilities on seven a Si:H nip solar cells using strongly and weakly absorbed illumination incident through the n-layer. For thinner devices from two laboratories, the drift-mobilities agreed with each other to within our random error of about 15%. For thicker devices from United Solar, the drift-mobilities were about twice as large when measured using strongly absorbed illumination. We propose that this effect is due to a mobility profile in the intrinsic absorber layer in which the mobility decreases for increasing distance from the substrate.

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