Deep Levels and Drift Mobility Measurements in Hydrogenated Amorphous Silicon

1988 ◽  
Vol 118 ◽  
Author(s):  
E. A. Schiff ◽  
M. A. Parker ◽  
K. A. Conrad
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Deep Levels ◽  
Drift Mobility ◽  
Hydrogenated Amorphous

Drift mobility under single and double injection in hydrogenated amorphous silicon

1988 ◽  
Vol 57 (6) ◽  
pp. 715-720 ◽  
Author(s):  
L. Xu ◽  
G. Winborne ◽  
M. Silver ◽  
V. Cannella ◽  
J. Mcgill
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Drift Mobility ◽  
Double Injection ◽  
Hydrogenated Amorphous

scholarly journals Hole Drift Mobility Measurements on a-Si:H using Surface and Uniformly Absorbed Illumination

2009 ◽  
Vol 1153 ◽  
Author(s):  
Steluta Adriana Dinca ◽  
Eric A Schiff ◽  
Subhendu Guha ◽  
Baojie Yan ◽  
Jeff Yang
Keyword(s):  
Stainless Steel ◽  
Solar Cells ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Time Of Flight ◽  
Drift Mobility ◽  
Electrode Interface ◽  
Steel Substrates ◽  
Hydrogenated Amorphous ◽  
Time Of Flight Method

AbstractThe standard, time-of-flight method for measuring drift mobilities in semiconductors uses strongly absorbed illumination to create a sheet of photocarriers near an electrode interface. This method is problematic for solar cells deposited onto opaque substrates, and in particular cannot be used for hole photocarriers in hydrogenated amorphous silicon (a Si:H) solar cells using stainless steel substrates. In this paper we report on the extension of the time-of-flight method that uses weakly absorbed illumination. We measured hole drift-mobilities on seven a Si:H nip solar cells using strongly and weakly absorbed illumination incident through the n-layer. For thinner devices from two laboratories, the drift-mobilities agreed with each other to within our random error of about 15%. For thicker devices from United Solar, the drift-mobilities were about twice as large when measured using strongly absorbed illumination. We propose that this effect is due to a mobility profile in the intrinsic absorber layer in which the mobility decreases for increasing distance from the substrate.

Photocapacitance and Hole Drift Mobility Measurements in Hydrogenated Amorphous Silicon (a-Si:H)

1997 ◽  
Vol 467 ◽  
Author(s):  
Indra Nurdjaja ◽  
E. A. Schiff
Keyword(s):  
Amorphous Silicon ◽  
Schottky Barrier ◽  
Reverse Bias ◽  
Voltage Dependence ◽  
Hydrogenated Amorphous Silicon ◽  
Drift Mobility ◽  
Schottky Barrier Diodes ◽  
Dispersion Effect ◽  
Hydrogenated Amorphous

ABSTRACTWe present measurements of the photocapacitance in hydrogenated amorphous silicon (a-Si:H) Schottky barrier diodes under reverse bias. A calculation relating photocapacitance to hole drift mobility measurements is also presented; the calculation incorporates the prominent dispersion effect for holes in a-Si:H usually attributed to valence bandtail trapping. The calculation accounts quantitatively for the magnitude and voltage-dependence of the photocapacitance.

Changes of Drift Mobility in a-Si:H with Light Exposure and Doping

1987 ◽  
Vol 95 ◽  
Author(s):  
J. Takada ◽  
H. Fritzsche
Keyword(s):  
Light Intensity ◽  
Amorphous Silicon ◽  
Light Exposure ◽  
Hydrogenated Amorphous Silicon ◽  
Drift Mobility ◽  
Mobility Edge ◽  
Strong Light ◽  
Quasi Fermi Level ◽  
Multiple Trapping ◽  
Hydrogenated Amorphous

AbstractMeasurements of the drift mobility μ of photo-excited electrons in n-type hydrogenated amorphous silicon (a-Si:H) as a function of light intensity are reported. The value of μ increases as the quasi Fermi level is moved closer to the transport states in accordance with the multiple trapping theory. The drift mobility decreases with increasing doping as well as with an increase in the concentration of metastable dangling bonds defects by strong light exposures. This decrease in μ between 300 and 360K can be explained by a corresponding decrease in the microscopic mobility, by an increase in the density of tail states within 0.35eV below the electron mobility edge, or by a combination of both these effects.

scholarly journals Hole Drift-Mobility Measurements in Contemporary Amorphous Silicon

2003 ◽  
Vol 762 ◽  
Author(s):  
S. Dinca ◽  
G. Ganguly ◽  
Z. Lu ◽  
E. A. Schiff ◽  
V. Vlahos ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Valence Band ◽  
Displacement Field ◽  
Room Temperature ◽  
Hydrogenated Amorphous Silicon ◽  
Hole Mobility ◽  
Drift Mobility ◽  
Temperature Dependent ◽  
Hydrogenated Amorphous ◽  
Insight Into

AbstractWe present hole drift-mobility measurements on hydrogenated amorphous silicon from several laboratories. These temperature-dependent measurements show significant variations of the hole mobility for the differing samples. Under standard conditions (displacement/field ratio of 2×10-9 cm2/V), hole mobilities reach values as large as 0.01 cm2/Vs at room-temperature; these values are improved about tenfold over drift-mobilities of materials made a decade or so ago. The improvement is due partly to narrowing of the exponential bandtail of the valence band, but there is presently little other insight into how deposition procedures affect the hole drift-mobility.

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