Методика анализа объемных дефектов по цифровой модели рельефа поверхности

We developed a technique for revealing and analyzing volumetric surface defects based on geomorphometric modeling, in particular, an analysis of models and maps of some morphometric variables (minimum curvature, maximum curvature, mean curvature, Gaussian curvature, unsphericity, etc.), derived from digital elevation models of a surface. The technique allows one to reveal areas of individual volume defects (cracks, film delaminations, shape deviations, etc.), to determine shape and size of both the defects themselves and adjucent modified areas, as well as to study patterns of their distribution. The technique effectiveness is exempified by defects on silicon–glass and silicon–silicon wafer assemblies, as well as a cracked Ni–W film. The technique can be promising for quality control of manufacturing and diagnostics of damages of various items, in particular, microelectronic products.

Effects of gamma radiation on the layered structure of lithium silicon – niobate.

In this work, it is shown that when an ionizing radiation pulse acts on surfactant-type devices in which a silicon single crystal is deposited with a gap on a piezoelectric substrate made of lithium niobate, the output signal is distorted. It was found that, depending on the type of conductivity of the material deposited on the lithium niobate, a different character of recovery of the device parameters was observed. The effect of ionizing radiation on air-gap devices operating as a memory correlator showed that the previously recorded signals were erased at a dose rate of ≥ 106 rad. To explain these dependencies, a model is used based on the fact that photo carriers excited by ionizing radiation in the depleted layer are captured by traps at the silicon-air interface for devices with an air gap and at the silicon-silicon oxide interface for monolithic structures The presented model, which takes into account traps not at the interface, explains most of the effects that cause a change in the output high frequency (RF) signal.

Production of high-energy Li-ion batteries comprising silicon-containing anodes and insertion-type cathodes

Rechargeable Li-based battery technologies utilising silicon, silicon-based, and Si-derivative anodes coupled with high-capacity/high-voltage insertion-type cathodes have reaped significant interest from both academic and industrial sectors. This stems from their practically achievable energy density, offering a new avenue towards the mass-market adoption of electric vehicles and renewable energy sources. Nevertheless, such high-energy systems are limited by their complex chemistry and intrinsic drawbacks. From this perspective, we present the progress, current status, prevailing challenges and mitigating strategies of Li-based battery systems comprising silicon-containing anodes and insertion-type cathodes. This is accompanied by an assessment of their potential to meet the targets for evolving volume- and weight-sensitive applications such as electro-mobility.

2D Electronics Based on Graphene Field Effect Transistors: Tutorial for Modelling and Simulation

This paper provides modeling and simulation insights into field-effect transistors based on graphene (GFET), focusing on the devices’ architecture with regards to the position of the gate (top-gated graphene transistors, back-gated graphene transistors, and top-/back-gated graphene transistors), substrate (silicon, silicon carbide, and quartz/glass), and the graphene growth (CVD, CVD on SiC, and mechanical exfoliation). These aspects are explored and discussed in order to facilitate the selection of the appropriate topology for system-level design, based on the most common topologies. Since most of the GFET models reported in the literature are complex and hard to understand, a model of a GFET was implemented and made available in MATLAB, Verilog in Cadence, and VHDL-AMS in Simplorer—useful tools for circuit designers with different backgrounds. A tutorial is presented, enabling the researchers to easily implement the model to predict the performance of their devices. In short, this paper aims to provide the initial knowledge and tools for researchers willing to use GFETs in their designs at the system level, who are looking to implement an initial setup that allows the inclusion of the performance of GFETs.

Design And Optimization of Integrated Mach_ Zehnder Modulators In X-Cut Lithium Niobate Thin Film

The Mach-Zehnder electro-optic modulator (MZM) was designed and fabricated using the AFM COMSOL program and the pulse laser deposition (PLD) technique. The PLD technique was used to deposit silicon, silicon oxide and LN thin film. Previously estimated optical properties of the prepared films were employed in the theoretical design of the modulator. Optimum device parameters were obtained, which delivered a considerable figure of merit (Vπ.L) values within the range of 2.12 to 2.25 at a device length of 2 cm.