Theoretical gain in strained InGaAs/AlGaAs quantum wells including valence‐band mixing effects

1990 ◽  
Vol 57 (26) ◽  
pp. 2835-2837 ◽  
Author(s):  
S. W. Corzine ◽  
R. H. Yan ◽  
L. A. Coldren
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Mixing Effects ◽  
Band Mixing ◽  
Valence Band Mixing

Valence-band mixing effects on hole oscillations in coupled quantum wells

1993 ◽  
Vol 47 (8) ◽  
pp. 4563-4568 ◽  
Author(s):  
C. Juang ◽  
P. A. Chen ◽  
C. Y. Chang
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Coupled Quantum Wells ◽  
Mixing Effects ◽  
Band Mixing ◽  
Valence Band Mixing

Effects of Giant Optical Anisotropy in R-plane GaN/AlGaN Quantum Wells by Valence Band Mixing

PIERS Online ◽  
2006 ◽  
Vol 2 (6) ◽  
pp. 562-566 ◽  
Author(s):  
Chun-Nan Chen ◽  
Kao-Feng Yarn ◽  
Win Jet Luo ◽  
Jih-Chen Chiang ◽  
Ikai Lo ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Optical Anisotropy ◽  
Band Mixing ◽  
Valence Band Mixing

scholarly journals Valence Band Mixing in GaAs/AlGaAs Quantum Wells Adjacent to Self-Assembled InAlAs Antidots

2019 ◽  
Vol 2019 ◽  
pp. 1-7
Author(s):  
Takuya Kawazu
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Valence Band ◽  
Energy Barrier ◽  
Heavy Hole ◽  
Electronic States ◽  
Light Hole ◽  
Photoluminescence Excitation ◽  
Band Mixing ◽  
Valence Band Mixing

Optical properties of GaAs/AlGaAs quantum wells (QWs) in the vicinity of InAlAs quantum dots (QDs) were studied and compared with a theoretical model to clarify how the QD strain affects the electronic states in the nearby QW. In0.4Al0.6As QDs are embedded at the top of the QWs; the QD layer acts as a source of strain as well as an energy barrier. Photoluminescence excitation (PLE) measurements showed that the QD formation leads to the increase in the ratio Ie-lh/Ie-hh of the PLE intensities for the light hole (lh) and the heavy hole (hh), indicating the presence of the valence band mixing. We also theoretically calculated the hh-lh mixing in the QW due to the nearby QD strain and evaluated the PLE ratio Ie-lh/Ie-hh.

Giant optical anisotropy in R-plane GaN/AlGaN quantum wells caused by valence band mixing effect

2008 ◽  
Vol 372 (10) ◽  
pp. 1691-1694 ◽  
Author(s):  
Chun-Nan Chen ◽  
Wei-Long Su ◽  
Jih-Chen Chiang ◽  
Ikai Lo ◽  
Wan-Tsang Wang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Optical Anisotropy ◽  
Mixing Effect ◽  
Band Mixing ◽  
Valence Band Mixing

New evidence of extensive valence-band mixing in GaAs quantum wells through excitation photoluminescence studies

1985 ◽  
Vol 32 (12) ◽  
pp. 8452-8454 ◽  
Author(s):  
R. C. Miller ◽  
A. C. Gossard ◽  
G. D. Sanders ◽  
Yia-Chung Chang ◽  
J. N. Schulman
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Band Mixing ◽  
Photoluminescence Studies ◽  
New Evidence ◽  
Valence Band Mixing
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