Quantum confined Stark effect in semiconductor quantum wells including valence band mixing and Coulomb effects

1993 ◽  
Vol 29 (11) ◽  
pp. 2741-2755 ◽  
Author(s):  
P. Debernardi ◽  
P. Fasano
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Stark Effect ◽  
Quantum Confined Stark Effect ◽  
Semiconductor Quantum Wells ◽  
Band Mixing ◽  
Quantum Confined ◽  
Coulomb Effects ◽  
Valence Band Mixing

Photon echo and valence-band mixing in semiconductor quantum wells

1993 ◽  
Vol 47 (23) ◽  
pp. 15679-15687 ◽  
Author(s):  
Y. Z. Hu ◽  
R. Binder ◽  
S. W. Koch
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Photon Echo ◽  
Semiconductor Quantum Wells ◽  
Band Mixing ◽  
Valence Band Mixing

Exciton dynamics and valence band mixing in tensile-strained semiconductor quantum wells

2000 ◽  
Vol 15 (2) ◽  
pp. 189-196 ◽  
Author(s):  
E Pérez ◽  
L Viña ◽  
E S Koteles ◽  
K M Lau ◽  
A Di Carlo ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Exciton Dynamics ◽  
Semiconductor Quantum Wells ◽  
Band Mixing ◽  
Valence Band Mixing

Effects of Giant Optical Anisotropy in R-plane GaN/AlGaN Quantum Wells by Valence Band Mixing

PIERS Online ◽  
2006 ◽  
Vol 2 (6) ◽  
pp. 562-566 ◽  
Author(s):  
Chun-Nan Chen ◽  
Kao-Feng Yarn ◽  
Win Jet Luo ◽  
Jih-Chen Chiang ◽  
Ikai Lo ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Optical Anisotropy ◽  
Band Mixing ◽  
Valence Band Mixing

scholarly journals Valence Band Mixing in GaAs/AlGaAs Quantum Wells Adjacent to Self-Assembled InAlAs Antidots

2019 ◽  
Vol 2019 ◽  
pp. 1-7
Author(s):  
Takuya Kawazu
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Valence Band ◽  
Energy Barrier ◽  
Heavy Hole ◽  
Electronic States ◽  
Light Hole ◽  
Photoluminescence Excitation ◽  
Band Mixing ◽  
Valence Band Mixing

Optical properties of GaAs/AlGaAs quantum wells (QWs) in the vicinity of InAlAs quantum dots (QDs) were studied and compared with a theoretical model to clarify how the QD strain affects the electronic states in the nearby QW. In0.4Al0.6As QDs are embedded at the top of the QWs; the QD layer acts as a source of strain as well as an energy barrier. Photoluminescence excitation (PLE) measurements showed that the QD formation leads to the increase in the ratio Ie-lh/Ie-hh of the PLE intensities for the light hole (lh) and the heavy hole (hh), indicating the presence of the valence band mixing. We also theoretically calculated the hh-lh mixing in the QW due to the nearby QD strain and evaluated the PLE ratio Ie-lh/Ie-hh.

Determination of unscreened exciton states in polar ZnO/(Mg,Zn)O quantum wells with strong quantum-confined Stark effect

2013 ◽  
Vol 88 (4) ◽  
Author(s):  
Marko Stölzel ◽  
Alexander Müller ◽  
Gabriele Benndorf ◽  
Matthias Brandt ◽  
Michael Lorenz ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Stark Effect ◽  
Quantum Confined Stark Effect ◽  
Quantum Confined

Quantum confined Stark effect in ZnCdSe/MgZnCdSe multiple quantum wells grown on InP substrates

1998 ◽  
Vol 184-185 ◽  
pp. 732-736 ◽  
Author(s):  
Takeshi Nagano ◽  
Ichirou Nomura ◽  
Masaru Haraguchi ◽  
Masayuki Arai ◽  
Hiroshi Hattori ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Stark Effect ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Quantum Confined Stark Effect ◽  
Quantum Confined ◽  
Inp Substrates

Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells

2009 ◽  
Vol 15 (4) ◽  
pp. 1080-1091 ◽  
Author(s):  
Jae-Hyun Ryou ◽  
P.D. Yoder ◽  
Jianping Liu ◽  
Z. Lochner ◽  
Hyunsoo Kim ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Stark Effect ◽  
Quantum Confined Stark Effect ◽  
Quantum Confined
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