scholarly journals Valence Band Mixing in GaAs/AlGaAs Quantum Wells Adjacent to Self-Assembled InAlAs Antidots

2019 ◽  
Vol 2019 ◽  
pp. 1-7
Author(s):  
Takuya Kawazu
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Valence Band ◽  
Energy Barrier ◽  
Heavy Hole ◽  
Electronic States ◽  
Light Hole ◽  
Photoluminescence Excitation ◽  
Band Mixing ◽  
Valence Band Mixing

Optical properties of GaAs/AlGaAs quantum wells (QWs) in the vicinity of InAlAs quantum dots (QDs) were studied and compared with a theoretical model to clarify how the QD strain affects the electronic states in the nearby QW. In0.4Al0.6As QDs are embedded at the top of the QWs; the QD layer acts as a source of strain as well as an energy barrier. Photoluminescence excitation (PLE) measurements showed that the QD formation leads to the increase in the ratio Ie-lh/Ie-hh of the PLE intensities for the light hole (lh) and the heavy hole (hh), indicating the presence of the valence band mixing. We also theoretically calculated the hh-lh mixing in the QW due to the nearby QD strain and evaluated the PLE ratio Ie-lh/Ie-hh.

Effects of Giant Optical Anisotropy in R-plane GaN/AlGaN Quantum Wells by Valence Band Mixing

PIERS Online ◽  
2006 ◽  
Vol 2 (6) ◽  
pp. 562-566 ◽  
Author(s):  
Chun-Nan Chen ◽  
Kao-Feng Yarn ◽  
Win Jet Luo ◽  
Jih-Chen Chiang ◽  
Ikai Lo ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Optical Anisotropy ◽  
Band Mixing ◽  
Valence Band Mixing

Giant optical anisotropy in R-plane GaN/AlGaN quantum wells caused by valence band mixing effect

2008 ◽  
Vol 372 (10) ◽  
pp. 1691-1694 ◽  
Author(s):  
Chun-Nan Chen ◽  
Wei-Long Su ◽  
Jih-Chen Chiang ◽  
Ikai Lo ◽  
Wan-Tsang Wang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Optical Anisotropy ◽  
Mixing Effect ◽  
Band Mixing ◽  
Valence Band Mixing

Photoluminescence Study of GaAs/AlGaAs Quantum Wells Grown On Si Substrates

1987 ◽  
Vol 91 ◽  
Author(s):  
C. Jagannath ◽  
S. Zemon ◽  
P. Norris ◽  
B.S. Elman ◽  
S.K. Shastry
Keyword(s):  
Quantum Wells ◽  
Heavy Hole ◽  
Biaxial Tension ◽  
Light Hole ◽  
Experimental Results ◽  
Photoluminescence Excitation ◽  
Exciton Energy ◽  
Photoluminescence Study ◽  
Si Substrates ◽  
Gaas Substrates

ABSTRACTPhotoluminescence and photoluminescence excitation spectroscopies are utilized to study excitons in GaAs/AlGaAs quantum wells (QW's) fabricated using MBE on MOCVD grown GaAs/Si. The experimental results are understood in terms of the biaxial tension of approximately 3 kbar present in the plane of growth for both the QW's and the GaAs buffer. An important consequence of the biaxial tension is that for QW's with well widths larger than ≈15 nm the light- and heavy- hole sub-bands cross each other in energy. This results in the light-hole exciton energy being lower than that of the heavy-hole exciton, opposite to the case of QW's grown on GaAs substrates.

INTERBAND OPTICAL PROPERTIES OF QUANTUM WIRES: THEORY AND APPLICATION

1995 ◽  
Vol 04 (01) ◽  
pp. 83-98 ◽  
Author(s):  
D. S. CITRIN
Keyword(s):  
Optical Properties ◽  
Quantum Wire ◽  
Radiative Decay ◽  
Heavy Hole ◽  
Quantum Wires ◽  
Wire Array ◽  
Light Hole ◽  
Polarization Modulator ◽  
Hole Band ◽  
Band Mixing

The electronic states near the fundamental gap largely determine the most commonly investigated linear and nonlinear optical properties of quantum wires. We first discuss heavy-hole-light-hole band-mixing effects and illustrate the consequences with an application in opto-electronics, namely a quantum-wire-array based polarization modulator. Next, an overview of polariton effects which determine the time scale for excitonic radiative decay is given and comparison with recent experiments made.

New evidence of extensive valence-band mixing in GaAs quantum wells through excitation photoluminescence studies

1985 ◽  
Vol 32 (12) ◽  
pp. 8452-8454 ◽  
Author(s):  
R. C. Miller ◽  
A. C. Gossard ◽  
G. D. Sanders ◽  
Yia-Chung Chang ◽  
J. N. Schulman
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Band Mixing ◽  
Photoluminescence Studies ◽  
New Evidence ◽  
Valence Band Mixing

Valence-band mixing effects on hole oscillations in coupled quantum wells

1993 ◽  
Vol 47 (8) ◽  
pp. 4563-4568 ◽  
Author(s):  
C. Juang ◽  
P. A. Chen ◽  
C. Y. Chang
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Coupled Quantum Wells ◽  
Mixing Effects ◽  
Band Mixing ◽  
Valence Band Mixing
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