Low‐temperature preparation of SiO2/Si(100) interfaces using a two‐step remote plasma‐assisted oxidation‐deposition process

1992 ◽  
Vol 60 (4) ◽  
pp. 434-436 ◽  
Author(s):  
T. Yasuda ◽  
Y. Ma ◽  
S. Habermehl ◽  
G. Lucovsky
2004 ◽  
Vol 173 (1-4) ◽  
pp. 113-118 ◽  
Author(s):  
C DELACOURT ◽  
C WURM ◽  
P REALE ◽  
M MORCRETTE ◽  
C MASQUELIER

Sign in / Sign up

Export Citation Format

Share Document