Low-temperature preparation of GaN-SiO2 interfaces with low defect density. I. Two-step remote plasma-assisted oxidation-deposition process
2004 ◽
Vol 22
(6)
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pp. 2402-2410
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2004 ◽
Vol 22
(6)
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pp. 2411-2418
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Keyword(s):
2010 ◽
Vol 25
(4)
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pp. 370-374
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Keyword(s):
2011 ◽
Vol 95
(4)
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pp. 1372-1377
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Keyword(s):
2005 ◽
Vol 274
(3-4)
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pp. 563-568
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