scholarly journals Low-temperature preparation of GaN-SiO2 interfaces with low defect density. I. Two-step remote plasma-assisted oxidation-deposition process

2004 ◽  
Vol 22 (6) ◽  
pp. 2402-2410 ◽  
Author(s):  
Choelhwyi Bae ◽  
Gerald Lucovsky
2004 ◽  
Vol 173 (1-4) ◽  
pp. 113-118 ◽  
Author(s):  
C DELACOURT ◽  
C WURM ◽  
P REALE ◽  
M MORCRETTE ◽  
C MASQUELIER

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