High Tc step‐edge Josephson junctions on silicon substrates

1995 ◽  
Vol 67 (15) ◽  
pp. 2235-2237 ◽  
Author(s):  
S. Linzen ◽  
F. Schmidl ◽  
L. Dörrer ◽  
P. Seidel
1998 ◽  
Vol 08 (PR3) ◽  
pp. Pr3-297-Pr3-300 ◽  
Author(s):  
S. Linzen ◽  
Y. J. Tian ◽  
U. Hübner ◽  
F. Schmidl ◽  
J. Scherbel ◽  
...  

2000 ◽  
Vol 341-348 ◽  
pp. 1473-1474 ◽  
Author(s):  
Soon-Gul Lee ◽  
Yunseok Hwang ◽  
Jin-Tae Kim ◽  
Gun Yong Sung

1995 ◽  
Vol 401 ◽  
Author(s):  
P. A. Rosenthal ◽  
J. E. Cosgrove ◽  
D. B. Fenner ◽  
L. R. Vale ◽  
R. H. Ono ◽  
...  

AbstractWe have fabricated and tested YBCO step-edge SNS Josephson junctions on silicon substrates. The silicon step edges were patterned photolithographically and reactively ion etched using an SF6 plasma. The structures were fabricated through sequential angled pulsed laser deposition of yttria stabilized zirconia, YBCO, and gold layers, followed by photolithographic patterning and ion milling. The completed devices showed resistively shunted junction (RSJ)-like current voltage characteristics and microwave induced Shapiro steps. Critical currents as large as 84 PA and resistances of order 0.5 Ω were obtained. Measurable critical currents were observed up to 76 K. We report on the fabrication and properties of these junctions.


2000 ◽  
Vol 18 (1) ◽  
pp. 106-108 ◽  
Author(s):  
Chen Geng-Hua ◽  
Wang Jing ◽  
Zhao Shi-Ping ◽  
Han Bing ◽  
Xu Feng-Zhi ◽  
...  

2001 ◽  
Vol 11 (1) ◽  
pp. 1339-1342 ◽  
Author(s):  
M. Bick ◽  
J. Schubert ◽  
M. Fardmanesh ◽  
G. Panaitov ◽  
M. Banzet ◽  
...  

1998 ◽  
Vol 72 (12) ◽  
pp. 1513-1515 ◽  
Author(s):  
Y. Chong ◽  
B. Ruck ◽  
R. Dittmann ◽  
C. Horstmann ◽  
A. Engelhardt ◽  
...  

1996 ◽  
Vol 06 (C3) ◽  
pp. C3-361-C3-365 ◽  
Author(s):  
P. Seidel ◽  
S. Linzen ◽  
F. Schmidl ◽  
R. Cihar
Keyword(s):  

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