Manifestation of the band structure of the semimetal in the tunneling conductance of a metal–insulator–semimetal junction

2000 ◽  
Vol 26 (11) ◽  
pp. 827-830 ◽  
Author(s):  
A. I. Khachaturov ◽  
E. Hatta ◽  
V. M. Svistunov
Keyword(s):  
Band Structure ◽  
Tunneling Conductance ◽  
Metal Insulator

Self-consistent band-structure theory of the metal-insulator transition

1981 ◽  
Vol 24 (8) ◽  
pp. 4879-4882 ◽  
Author(s):  
Leonard M. Sander ◽  
Herbert B. Shore ◽  
J. H. Rose
Keyword(s):  
Band Structure ◽  
Insulator Transition ◽  
Structure Theory ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Self Consistent

PRESSURE-INDUCED TRANSITION OF 2DEG IN δ-DOPED GaAs TO INSULATING STATE

2007 ◽  
Vol 06 (03n04) ◽  
pp. 209-213
Author(s):  
E. M. DIZHUR ◽  
A. N. VORONOVSKY ◽  
A. V. FEDOROV ◽  
I. N. KOTEL'NIKOV ◽  
S. E. DIZHUR
Keyword(s):  
Band Structure ◽  
Temperature Coefficient ◽  
Pressure Dependence ◽  
Drastic Change ◽  
Metal Insulator Transition ◽  
Exponential Behavior ◽  
Zero Bias ◽  
Metal Insulator ◽  
Zero Bias Anomaly ◽  
Tunneling Resistance

The tunneling and the lateral conductance of 2DEG formed in the GaAs with the δ-doped layer were measured simultaneously at hydrostatic pressures at helium temperatures. The resistivity of the δ-doped layer sharply increases by > 3 orders of magnitude at about 2 GPa, and its temperature coefficient changes from ~ - 0.04 to ~ - 4 K -1. The tunneling resistance shows only slight change of exponential behavior at about 1.5 GPa, while a drastic change of the Zero Bias Anomaly (ZBA) takes place just at the metal–insulator transition. Such a behavior is interpreted in terms of pressure dependence of the GaAs band structure and the DX-level position.

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