In Memoriam: Myriam Sarachik

Myriam Sarachik passed away on October 7, 2021. Her work on the Kondo effect, the metal-insulator transition, and quantum tunneling in molecular magnets are highlights in her research career. But her lifetime of first-rate work was realized in the face of great adversity. She was a totem of not only scientific excellence, but also of the perseverance of the human spirit.

Machines for Materials and Materials for Machines: Metal-Insulator Transitions and Artificial Intelligence

In this perspective, we discuss the current and future impact of artificial intelligence and machine learning for the purposes of better understanding phase transitions, particularly in correlated electron materials. We take as a model system the rare-earth nickelates, famous for their thermally-driven metal-insulator transition, and describe various complementary approaches in which machine learning can contribute to the scientific process. In particular, we focus on electron microscopy as a bottom-up approach and metascale statistical analyses of classes of metal-insulator transition materials as a bottom-down approach. Finally, we outline how this improved understanding will lead to better control of phase transitions and present as an example the implementation of rare-earth nickelates in resistive switching devices. These devices could see a future as part of a neuromorphic computing architecture, providing a more efficient platform for neural network analyses – a key area of machine learning.

Resonant tunneling driven metal-insulator transition in double quantum-well structures of strongly correlated oxide

The metal-insulator transition (MIT), a fascinating phenomenon occurring in some strongly correlated materials, is of central interest in modern condensed-matter physics. Controlling the MIT by external stimuli is a key technological goal for applications in future electronic devices. However, the standard control by means of the field effect, which works extremely well for semiconductor transistors, faces severe difficulties when applied to the MIT. Hence, a radically different approach is needed. Here, we report an MIT induced by resonant tunneling (RT) in double quantum well (QW) structures of strongly correlated oxides. In our structures, two layers of the strongly correlated conductive oxide SrVO3 (SVO) sandwich a barrier layer of the band insulator SrTiO3. The top QW is a marginal Mott-insulating SVO layer, while the bottom QW is a metallic SVO layer. Angle-resolved photoemission spectroscopy experiments reveal that the top QW layer becomes metallized when the thickness of the tunneling barrier layer is reduced. An analysis based on band structure calculations indicates that RT between the quantized states of the double QW induces the MIT. Our work opens avenues for realizing the Mott-transistor based on the wave-function engineering of strongly correlated electrons.

Phase transition in vanadium oxide films formed by multistep deposition

VOx films deposited using the multistep method have been investigated. These films were deposited by repeating the two-stage method of low-temperature deposition – low-temperature annealing. The structure and characteristics of VOx thin films have been studied. Taking into account the obtained results, theoretical modeling of the structure was performed and the parameters of the metal-insulator transition have been calculated.