Quantum‐Mechanical Variational Theory of Bimolecular Gas‐Phase Reaction Rates

1969 ◽  
Vol 51 (9) ◽  
pp. 4075-4078 ◽  
Author(s):  
Neil S. Snider
2006 ◽  
Vol 527-529 ◽  
pp. 107-110 ◽  
Author(s):  
Yasuo Kito ◽  
Emi Makino ◽  
Kei Ikeda ◽  
Masao Nagakubo ◽  
Shoichi Onda

High temperature chemical vapor deposition (HTCVD) simulations of silicon carbide (SiC) were demonstrated with experimental results. A vertical cylindrical reactor was used in an RF inductive heating furnace and the temperature was more than 2200. SiH4 and C3H8 were used as source gases and H2 as carrier gas. A gas phase reaction model from the literature was used on the condition that the gas phase reaction is a quasi-equilibrium state. It was found that the major species were Si, Si2C, SiC2 and C2H2 in the gas phase reaction model as well as in the thermodynamic equilibrium calculation. Sublimation etching was considered in the surface reaction rates by modifying partial pressures of species with equilibrium vapor pressures. CFD-ACE+ and MALT2 software packages were used in the present calculation. The sticking coefficients were determined by fitting the calculated growth rates to the experimental ones. The simulated growth rate in a different reactor is in good agreement with the experimental value, using the same sticking coefficients. The present simulation could be useful to design a new reactor and to find optimum conditions.


2004 ◽  
Vol 676 (1-3) ◽  
pp. 97-103 ◽  
Author(s):  
Annia Galano ◽  
J.Raúl Alvarez-Idaboy ◽  
Esther Agacino-Valdés ◽  
Ma.Esther Ruiz-Santoyo

1970 ◽  
Vol 53 (9) ◽  
pp. 3745-3751 ◽  
Author(s):  
Carleton J. Howard ◽  
Howard W. Rundle ◽  
Frederick Kaufman

1993 ◽  
Vol 65 (3) ◽  
pp. 423-428 ◽  
Author(s):  
D. V. Dearden ◽  
H. Zhang ◽  
I.-H. Chu ◽  
P. Wong ◽  
Qizhu Chen

1999 ◽  
Vol 1 (6) ◽  
pp. 1061-1065 ◽  
Author(s):  
Thanh N. Truong ◽  
Wendell T. Duncan ◽  
Max Tirtowidjojo

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