Thermal Contact to the Mixing Chamber of a Dilution Refrigerator

1969 ◽  
Vol 40 (2) ◽  
pp. 379-380 ◽  
Author(s):  
A. C. Mota ◽  
J. C. Wheatley
Keyword(s):  
Thermal Contact ◽  
Dilution Refrigerator ◽  
Mixing Chamber

Cooling by compression of 3He in the mixing chamber of the Leiden alternative dilution refrigerator

Physica ◽  
1974 ◽  
Vol 77 (3) ◽  
pp. 523-531 ◽  
Author(s):  
T. Satoh ◽  
R.G. Jurriëns ◽  
K.W. Taconis ◽  
R. de Bruyn Ouboter
Keyword(s):  
Dilution Refrigerator ◽  
Mixing Chamber

Temperature inhomogeneity in the glass mixing chamber of a 3He/4He dilution refrigerator

1979 ◽  
Vol 50 (1) ◽  
pp. 24-25 ◽  
Author(s):  
Masafumi Kumano ◽  
Yusaku Ikegami ◽  
Takashi Sato ◽  
Shinhachiro Saito
Keyword(s):  
Dilution Refrigerator ◽  
Temperature Inhomogeneity ◽  
Mixing Chamber

Two-axis goniometer for use in the mixing chamber of a dilution refrigerator

Cryogenics ◽  
1997 ◽  
Vol 37 (5) ◽  
pp. 275-277 ◽  
Author(s):  
M. Suzuki ◽  
A. Sawada ◽  
A. Ishiguro ◽  
K. Maruya
Keyword(s):  
Dilution Refrigerator ◽  
Mixing Chamber

Double mixing chamber system on dilution refrigerator

Cryogenics ◽  
1978 ◽  
Vol 18 (5) ◽  
pp. 277-280 ◽  
Author(s):  
G. Frossati ◽  
B. Hébral ◽  
G. Schumacher ◽  
D. Thoulouze
Keyword(s):  
Dilution Refrigerator ◽  
Chamber System ◽  
Mixing Chamber

Hetero-Epitaxy of Group Va Metals on Sapphire

1972 ◽  
Vol 30 ◽  
pp. 492-493
Author(s):  
J. E. O'Neal ◽  
J. J. Bellina ◽  
B. B. Rath
Keyword(s):  
Thermal Contact ◽  
High Vacuum ◽  
Electron Beam Evaporation ◽  
Ultra High Vacuum ◽  
Backing Plate ◽  
Sapphire Substrates ◽  
Deposition Parameters ◽  
Polishing Damage ◽  
Reflection Electron Diffraction

Thin films of the bcc metals vanadium, niobium and tantalum were epitaxially grown on (0001) and sapphire substrates. Prior to deposition, the mechanical polishing damage on the substrates was removed by an in-situ etch. The metal films were deposited by electron-beam evaporation in ultra-high vacuum. The substrates were heated by thermal contact with an electron-bombarded backing plate. The deposition parameters are summarized in Table 1.The films were replicated and examined by electron microscopy and their crystallographic orientation and texture were determined by reflection electron diffraction. Verneuil-grown and Czochralskigrown sapphire substrates of both orientations were employed for each evaporation. The orientation of the metal deposit was not affected by either increasing the density of sub-grain boundaries by about a factor of ten or decreasing the deposition rate by a factor of two. The results on growth epitaxy are summarized in Tables 2 and 3.

Rapid Freezing of Freeze-Etch Specimens

1980 ◽  
Vol 38 ◽  
pp. 752-755
Author(s):  
A. Elgsaeter ◽  
T. Espevik ◽  
G. Kopstad
Keyword(s):  
Low Temperature ◽  
Metal Surface ◽  
Relative Velocity ◽  
Thermal Contact ◽  
High Rate ◽  
Rapid Freezing ◽  
Temperature Decrease ◽  
Freeze Etching

The importance of a high rate of temperature decrease (“rapid freezing”) when freezing specimens for freeze-etching has long been recognized1. The two basic methods for achieving rapid freezing are: 1) dropping the specimen onto a metal surface at low temperature, 2) bringing the specimen instantaneously into thermal contact with a liquid at low temperature and subsequently maintaining a high relative velocity between the liquid and the specimen. Over the last couple of years the first method has received strong renewed interest, particularily as the result of a series of important studies by Heuser and coworkers 2,3. In this paper we will compare these two freezing methods theoretically and experimentally.

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