Mechanisms in fs-laser ablation in fused silica

2004 ◽  
Vol 95 (9) ◽  
pp. 5166-5171 ◽  
Author(s):  
T. Q. Jia ◽  
Z. Z. Xu ◽  
R. X. Li ◽  
D. H. Feng ◽  
X. X. Li ◽  
...  
Keyword(s):  
2012 ◽  
Vol 16 ◽  
pp. 15-20 ◽  
Author(s):  
Omid Tayefeh Ghalehbeygi ◽  
Vural Kara ◽  
Levent Trabzon ◽  
Selcuk Akturk ◽  
Huseyin Kizil

We fabricated Si Nano-columns by a femtosecond laser with various wavelengths and process parameters, whilst the specimen was submerged in water. The experiments were carried out by three types of wavelengths i.e. 1030 nm, 515nm, 343nm, with 500 fs laser pulses. The scales of these spikes are much smaller than micro spikes that are constructed by laser irradiation of silicon surface in vacuum or gases like SF6, Cl2. The Si nano-columns of 300 nm or less in width were characterized by SEM measurements. The formation of these Si Nano-columns that were revealed by SEM observation, indicates chemical etching with laser ablation occurred when surface exposed by laser beam. We observed 200 nm spikes height at the center of laser beam profile and the ones uniform in height at lateral incident area.


1995 ◽  
Vol 86 (1-4) ◽  
pp. 128-133 ◽  
Author(s):  
P. Baeri ◽  
R. Reitano ◽  
N. Marino

Plasmonics ◽  
2016 ◽  
Vol 12 (6) ◽  
pp. 1813-1824 ◽  
Author(s):  
Luis J. Mendoza Herrera ◽  
David Muñetón Arboleda ◽  
Jesica M. J. Santillán ◽  
Marcela B. Fernández van Raap ◽  
Lucía B. Scaffardi ◽  
...  

Author(s):  
Seisuke Nakashima ◽  
Koji Sugioka ◽  
Katsumi Midorikawa

For micro/nanofabrication of Gallium nitride (GaN), we developed wet-chemical-assisted fs laser ablation in which the femtosecond (fs) laser beam focused using an objective lens was directed on the surface of a GaN substrate immersed in 35% hydrochloric (HCl) acid solution. Nanocrators with a diameter as small as 320 nm (FWHM) were successfully formed on surface of a single-crystal GaN substrate by a single pulse of the second harmonic fs-laser beam (λ = 387 nm, 150 fs) focused using an objective lens with NA of 0.5. Nano scale ablation is responsible for two-photon absorption of the fs laser. The ablated craters exhibit higher quality and better uniformity with little debris formation compared with those produced by fs-laser ablation in air followed by etching in HCl (two-step processing method). The high quality ablation is presumably due to photochemical or photothermal reaction of HCl solution with ablated materials, resulting in complete removal of debris and in sharp edge and smooth surface of craters. We have demonstrated formation of 140-μm-long straight and hollow channels embedded in GaN by scanning the laser beam inside the substrate. 3D micro and nano fabrication technique of GaN has great potential for manufacture of highly-functional micro devices. We have also tried to fabricate 2D periodic nanostructures on GaN surface by scanning the sample in x-y plane. Nanocrators with uniform size periodically arranged on GaN surface can act as a two-dimensional (2D) photonic crystal which is expected to enhance a light extraction efficiency of blue LED.


2006 ◽  
Vol 252 (13) ◽  
pp. 4672-4677 ◽  
Author(s):  
C. Ghica ◽  
C. Ristoscu ◽  
G. Socol ◽  
D. Brodoceanu ◽  
L.C. Nistor ◽  
...  
Keyword(s):  
Fs Laser ◽  

Author(s):  
M. Nishikino ◽  
N. Hasegawa ◽  
N. Ohnishi ◽  
A. M. Ito ◽  
Y. Minami ◽  
...  

2017 ◽  
Vol 5 (5) ◽  
pp. 488 ◽  
Author(s):  
Qingsong Wang ◽  
Lan Jiang ◽  
Jingya Sun ◽  
Changji Pan ◽  
Weina Han ◽  
...  

2006 ◽  
Vol 14 (6) ◽  
pp. 2151 ◽  
Author(s):  
Dominik Blömer ◽  
Alexander Szameit ◽  
Felix Dreisow ◽  
Thomas Schreiber ◽  
Stefan Nolte ◽  
...  

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