Effect of Particle Size and pH Value of Slurry on Chemical Mechanical Polishing of SiO2 Film

This study investigated the effects of particle size and pH of SiO2-based slurry on chemical mechanical polishing for SiO2 film. It was found that the removal rates and surface roughness of the material was highly dependent on the particle size and pH. As the particle size varied, the main polishing mechanism provided the activation energy to mechanical erasure. In addition, pH affected the particle size and Zeta potential, which had an important effect on the strength of the mechanical and chemical action of the chemical mechanical polishing. The change in mechanical action greatly influenced the removal rate. According to the experimental results, the best polishing of SiO2 film was achieved with 40 nm particle size SiO2 abrasives when the pH was 4.

Quantitative and nondestructive determination of residual stress for SiO2 thin film by laser-generated surface acoustic wave technique

The laser-generated surface acoustic wave (SAW) technique is a promising method to measure the mechanical properties of thin films quickly and nondestructively. Residual stress is inevitable during the processing and manufacturing of integrated circuits, which will have a major impact on the physical and mechanical properties of the thin film materials and cause deterioration to the structural strength. In this study, the SAW technique based method is proposed for quantitative and nondestructive measuring the residual stress in the nanostructured films. The method is verified by the experiment measuring the SiO2 films in the thickness range of 100 to 2000 nm. The experimental procedures, including signal excitation, reception and processing, are described in detail. By matching the SAW experimental dispersion curve with the calculated theoretical dispersion curve containing the residual stress, the residual stress of the SiO2 films along [110] and [100] crystallographic orientation of the Si wafer is successfully quantified. The determination results are ranged from -65.5 to 421.1 MPa and the stress value increases as the film thickness decreases, revealing the residual stress of the SiO2 film is compressive. Meanwhile, the conventional substrate curvature method as a comparison is used to verify the correctness and feasibility of the proposed SAW method for the residual stress determination.

Scavenger with Protonated Phosphite Ions for Incredible Nanoscale ZrO2-Abrasive Dispersant Stability Enhancement and Related Tungsten-Film Surface Chemical–Mechanical Planarization

For scaling-down advanced nanoscale semiconductor devices, tungsten (W)-film surface chemical mechanical planarization (CMP) has rapidly evolved to increase the W-film surface polishing rate via Fenton-reaction acceleration and enhance nanoscale-abrasive (i.e., ZrO2) dispersant stability in the CMP slurry by adding a scavenger to suppress the Fenton reaction. To enhance the ZrO2 abrasive dispersant stability, a scavenger with protonate-phosphite ions was designed to suppress the time-dependent Fenton reaction. The ZrO2 abrasive dispersant stability (i.e., lower H2O2 decomposition rate and longer H2O2 pot lifetime) linearly and significantly increased with scavenger concentration. However, the corrosion magnitude on the W-film surface during CMP increased significantly with scavenger concentration. By adding a scavenger to the CMP slurry, the radical amount reduction via Fenton-reaction suppression in the CMP slurry and the corrosion enhancement on the W-film surface during CMP performed that the W-film surface polishing rate decreased linearly and notably with increasing scavenger concentration via a chemical-dominant CMP mechanism. Otherwise, the SiO2-film surface polishing rate peaked at a specific scavenger concentration via a chemical and mechanical-dominant CMP mechanism. The addition of a corrosion inhibitor with a protonate-amine functional group to the W-film surface CMP slurry completely suppressed the corrosion generation on the W-film surface during CMP without a decrease in the W- and SiO2-film surface polishing rate.

Influence of Hydrogen-Nitrogen Hybrid Passivation on the Gate Oxide Film of n-Type 4H-SiC MOS Capacitors

Hydrogen-nitrogen hybrid passivation treatment for growing high-property gate oxide films by high-temperature wet oxidation, with short-time NO POA, is proposed and demonstrated. Secondary ion mass spectroscopy (SIMS) measurements show that the proposed method causes hydrogen and appropriate nitrogen atoms to accumulate in Gaussian-like distributions near the SiO2/SiC interface. Moreover, the hydrogen atoms are also incorporated into the grown SiO2 layer, with a concentration of approximately 1 × 1019 cm−3. The conductance characteristics indicate that the induced hydrogen and nitrogen passivation atoms near the interface can effectively reduce the density of interface traps and near-interface traps. The current-voltage (I-V), X-ray photoelectron spectroscopy (XPS), and time-dependent bias stress (TDBS) with ultraviolet light (UVL) irradiation results demonstrate that the grown SiO2 film with the incorporated hydrogen passivation atoms can effectively reduce the density of oxide electron traps, leading to the barrier height being improved and the leakage current being reduced.

Visualization of Charge-Transfer Complex for the Detection of 2, 4, 6-Trinitrotoluene Using Terahertz Chemical Microscope

This study focuses on the visualization of a charge-transfer complex, namely a Meisenheimer complex, for the detection of uncharged 2, 4, 6-trinitrotoluene (TNT) explosives by developing a terahertz chemical microscope (TCM) imaging system. The organic amine 3-aminopropyltriethoxysilane (APTES) was immobilized on an SiO2-film-coated TCM sensing plate, where it interacted with TNT molecules. The surface electrical potential distribution of TNT, APTES, and the charge-transfer complex was mapped. An electrical potential shift occurred due to the formation of a charge-transfer complex between the electron-rich amino-silane APTES and electron-deficient TNT molecules on the surface of the sensing plate. The electrical imaging and detection of TNT explosives by using the TCM imaging system were demonstrated by measuring the amplitude of the terahertz pulse caused by this electrical potential shift. N-(2-Aminoethyl)-3-aminopropyltrimethoxysilane and N1-(3-trimethoxysilylpropyl)diethylenetriamine were used for further evaluation and comparison of color changes arising from the amine-TNT interactions. The results have shown that TCM imaging is a promising method for the detection of uncharged TNT explosives at a low (sub-parts-per-million) concentration.

Super fine cerium hydroxide abrasives for SiO2 film chemical mechanical planarization performing scratch free

Face-centered-cubic crystallized super-fine (~ 2 nm in size) wet-ceria-abrasives are synthesized using a novel wet precipitation process that comprises a Ce4+ precursor, C3H4N2 catalyst, and NaOH titrant for a synthesized termination process at temperature of at temperature of 25 °C. This process overcomes the limitations of chemical–mechanical-planarization (CMP)-induced scratches from conventional dry ceria abrasives with irregular surfaces or wet ceria abrasives with crystalline facets in nanoscale semiconductor devices. The chemical composition of super-fine wet ceria abrasives depends on the synthesis termination pH, that is, Ce(OH)4 abrasives at a pH of 4.0–5.0 and a mixture of CeO2 and Ce(OH)4 abrasives at a pH of 5.5–6.5. The Ce(OH)4 abrasives demonstrate better abrasive stability in the SiO2-film CMP slurry than the CeO2 abrasives and produce a minimum abrasive zeta potential (~ 12 mV) and a minimum secondary abrasive size (~ 130 nm) at the synthesis termination pH of 5.0. Additionally, the abrasive stability of the SiO2-film CMP slurry that includes super-fine wet ceria abrasives is notably sensitive to the CMP slurry pH; the best abrasive stability (i.e., a minimum secondary abrasive size of ~ 130 nm) is observed at a specific pH (6.0). As a result, a maximum SiO2-film polishing rate (~ 524 nm/min) is achieved at pH 6.0, and the surface is free of stick-and-slip type scratches.

Mechanism and Effect of the Dilution Gas Flow Rate on Various Fe–Si/SiO2 Soft Magnetic Composites during Fluidised Bed Chemical Vapour Deposition

The effect of the dilution gas flow rate on inorganic oxide insulating layers can improve fluidised bed chemical vapour deposition (FBCVD) in Fe–Si/inorganic-oxide soft magnetic composites and obtain excellent magnetic properties. Herein, Fe–Si/SiO2 composite particles coated via FBCVD and deposited at a 125–350 mL/min Ar-dilution gas flow rate were prepared and sintered into soft magnetic composites. Results demonstrate that SiO2 deposited on the Fe–Si substrate particle surface changed from submicron SiO2 clusters (125 mL/min) to an incomplete SiO2 film, then to a complete SiO2 film, and finally to a porous SiO2 film as the Ar-dilution gas flow rate increased. SiO2 layers began to transform from the amorphous to the beta-cristobalite state with a hexagonal crystal structure between 1149.45 K and 1280.75 K. However, the SiO2 amorphous layers’ crystallisation did not affect the Fe–Si substrate particles’ crystal structure. With the increasing Ar-dilution gas flow rate, the saturation magnetisation of Fe–Si/SiO2 soft magnetic composites initially decreased and then increased. The electrical resistivity increased before 150 mL/min, followed by an increase between 150 and 250 mL/min and then decreased, whereas the total core loss exhibited the opposite trend. These results show that magnetic performance can be promoted by selecting a suitable dilution flow rate.