Thermal Instability with Radiative Transfer

1970 ◽  
Vol 13 (2) ◽  
pp. 222 ◽  
Author(s):  
C. Christophorides
1974 ◽  
Vol 30 (2) ◽  
pp. 144-154
Author(s):  
C. V. Gopalakrishnan Nair ◽  
M. G. Palekar

2020 ◽  
Vol 494 (1) ◽  
pp. L27-L31 ◽  
Author(s):  
Max Gronke ◽  
S Peng Oh

ABSTRACT Cold T ∼ 104 K gas morphology could span a spectrum ranging from large discrete clouds to a fine ‘mist’ in a hot medium. This has myriad implications, including dynamics and survival, radiative transfer, and resolution requirements for cosmological simulations. Here, we use 3D hydrodynamic simulations to study the pressure-driven fragmentation of cooling gas. This is a complex, multistage process, with an initial Rayleigh–Taylor unstable contraction phase that seeds perturbations, followed by a rapid, violent expansion leading to the dispersion of small cold gas ‘droplets’ in the vicinity of the gas cloud. Finally, due to turbulent motions, and cooling, these droplets may coagulate. Our results show that a gas cloud ‘shatters’ if it is sufficiently perturbed out of pressure balance (δP/P ∼ 1) and has a large final overdensity χf ≳ 300, with only a weak dependence on the cloud size. Otherwise, the droplets reassemble back into larger pieces. We discuss our results in the context of thermal instability and clouds embedded in a shock-heated environment.


Author(s):  
N. David Theodore ◽  
Andre Vantomme ◽  
Peter Crazier

Contact is typically made to source/drain regions of metal-oxide-semiconductor field-effect transistors (MOSFETs) by use of TiSi2 or CoSi2 layers followed by AI(Cu) metal lines. A silicide layer is used to reduce contact resistance. TiSi2 or CoSi2 are chosen for the contact layer because these silicides have low resistivities (~12-15 μΩ-cm for TiSi2 in the C54 phase, and ~10-15 μΩ-cm for CoSi2). CoSi2 has other desirable properties, such as being thermally stable up to >1000°C for surface layers and >1100°C for buried layers, and having a small lattice mismatch with silicon, -1.2% at room temperature. During CoSi2 growth, Co is the diffusing species. Electrode shorts and voids which can arise if Si is the diffusing species are therefore avoided. However, problems can arise due to silicide-Si interface roughness (leading to nonuniformity in film resistance) and thermal instability of the resistance upon further high temperature annealing. These problems can be avoided if the CoSi2 can be grown epitaxially on silicon.


2008 ◽  
Vol 28 ◽  
pp. 67-74 ◽  
Author(s):  
B. Aringer ◽  
W. Nowotny ◽  
S. Höfner
Keyword(s):  

2008 ◽  
Vol 28 ◽  
pp. 121-128
Author(s):  
T. Beckert ◽  
S.F. Hönig
Keyword(s):  

Sign in / Sign up

Export Citation Format

Share Document