Influence of interface spin-flip scattering on spin accumulation and spin currents in magnetic multilayers with collinear magnetizations

2006 ◽  
Vol 99 (2) ◽  
pp. 023905 ◽  
Author(s):  
M. Wawrzyniak ◽  
M. Gmitra ◽  
J. Barnaś
2006 ◽  
Vol 243 (1) ◽  
pp. 193-196
Author(s):  
V. R. Vieira ◽  
V. K. Dugaev ◽  
P. D. Sacramento ◽  
J. Barnaś ◽  
M. A. N. Araújo ◽  
...  

2011 ◽  
Vol 25 (30) ◽  
pp. 2335-2341 ◽  
Author(s):  
M. BAGHERI TAGANI ◽  
H. RAHIMPOUR SOLEIMANI

We study spin-dependent transport through a spin diode in the presence of spin-flip by means of reduced density matrix approach. The current polarization and the spin accumulation are computed and influence of spin-flip on the current polarization is also analyzed. Analytical relations for the current polarization and the spin accumulation are obtained as a function of polarization of ferromagnetic lead and the spin-flip rate. It is observed that the current polarization becomes zero under fast spin-flip and the spin accumulation decreases up to 85% when the time of spin-flip is equal to the tunneling time. It is also observed that the current polarization increases linearly when the dot is singly occupied, whereas its behavior is more complicated when the dot is doubly occupied.


2009 ◽  
Vol 23 (11) ◽  
pp. 2413-2438 ◽  
Author(s):  
SERGIO O. VALENZUELA

In recent years, electrical spin injection and detection has grown into a lively area of research in the field of spintronics. Spin injection into a paramagnetic material is usually achieved by means of a ferromagnetic source, whereas the induced spin accumulation or associated spin currents are detected by means of a second ferromagnet or the reciprocal spin Hall effect, respectively. This article reviews the current status of this subject, describing both recent progress and well-established results. The emphasis is on experimental techniques and accomplishments that brought about important advances in spin phenomena and possible technological applications. These advances include, amongst others, the characterization of spin diffusion and precession in a variety of materials, such as metals, semiconductors and graphene, the determination of the spin polarization of tunneling electrons as a function of the bias voltage, and the implementation of magnetization reversal in nanoscale ferromagnetic particles with pure spin currents.


2016 ◽  
Vol 93 (18) ◽  
Author(s):  
Liang Liu ◽  
Jiasen Niu ◽  
Huiqiang Guo ◽  
Jian Wei ◽  
D. L. Li ◽  
...  
Keyword(s):  

1994 ◽  
Vol 75 (10) ◽  
pp. 6699-6703 ◽  
Author(s):  
J. Bass ◽  
Q. Yang ◽  
S. F. Lee ◽  
P. Holody ◽  
R. Loloee ◽  
...  

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