Non-volatile artificial synapse based on a vortex nano-oscillator

In this work, a new mechanism to combine a non-volatile behaviour with the spin diode detection of a vortex-based spin torque nano-oscillator (STVO) is presented. Experimentally, it is observed that the spin diode response of the oscillator depends on the vortex chirality. Consequently, fixing the frequency of the incoming signal and switching the vortex chirality results in a different rectified voltage. In this way, the chirality can be deterministically controlled via the application of electrical signals injected locally in the device, resulting in a non-volatile control of the output voltage for a given input frequency. Micromagnetic simulations corroborate the experimental results and show the main contribution of the Oersted field created by the input RF current density in defining two distinct spin diode detections for different chiralities. By using two non-identical STVOs, we show how these devices can be used as programmable non-volatile synapses in artificial neural networks.

Electrical characterisation of higher order spin wave modes in vortex-based magnetic tunnel junctions

NiFe-based vortex spin-torque nano-oscillators (STNO) have been shown to be rich dynamic systems which can operate as efficient frequency generators and detectors, but with a limitation in frequency determined by the gyrotropic frequency, typically sub-GHz. In this report, we present a detailed analysis of the nature of the higher order spin wave modes which exist in the Super High Frequency range (3–30 GHz). This is achieved via micromagnetic simulations and electrical characterisation in magnetic tunnel junctions, both directly via the spin-diode effect and indirectly via the measurement of the coupling with the gyrotropic critical current. The excitation mechanism and spatial profile of the modes are shown to have a complex dependence on the vortex core position. Additionally, the inter-mode coupling between the fundamental gyrotropic mode and the higher order modes is shown to reduce or enhance the effective damping depending upon the sense of propagation of the confined spin wave.

Promising spin caloritronics and spin diode effects based on 1T-FeCl2 nanotube devices

Spin caloritronics, which combines thermoelectric effect and spintronics, has received more and more attention due to the feasible way to achieve lower-energy consumption and improve performance in thermal energy conversion...

Modeling and implementation of spin diode based on two dimensional materials using Monte Carlo sampling method

Purpose A “spin-diode” is the spintronics equivalent of an electrical diode: applying an external magnetic field greater than the limit of spin-diode BT flips the spin-diode between an isolating state and a conducting state [1]. While conventional electrical diodes are two-terminal devices with electrical current between the two terminals modulated by an electrical field, these two-terminal magneto resistive devices can generally be referred to as “spin-diodes” in which a magnetic field modulates the electrical current between the two terminals. Design/methodology/approach Current modulation and rectification are an important subject of electronics as well as spintronics spin diode is two-terminal magnetoresistive devices in which change in resistance in response to an applied magnetic field; this magnetoresistance occurs due to a variety of phenomena and with varying magnitudes and directions. Findings In this paper, an efficient rectifying spin diode is introduced. The resulting spin diode is formed from graphene gallium and indium quantum dots and antimony-doped molybdenum disulfide. Converting an alternating bias voltage to direct current is the main achievement of this model device with an additional profit of rectified spin-current. The non-equilibrium density functional theory with a Monte Carlo sampling method is used to evaluate the flow of electrons and rectification ratio of the system. Originality/value The results indicate that spin diode displaying both spin-current and charge-current rectification should be possible and may find practical application in nanoscale devices that combine logic and memory functions.

CrO2-based heterostructure and magnetic tunnel junction: perfect spin filtering effect, spin diode effect and high tunnel magnetoresistance

Spin-dependent device density of states in the CrO2/TiO2/CrO2 magnetic tunnel junction.