Enhanced spin accumulation in nano-pillar-based lateral spin valve using spin reservoir effect

Lateral spin valves are ideal nanostructures for investigating spin-transport physics phenomena and promoting the development of future spintronic devices owing to dissipation-less pure spin current. The magnitude of the spin accumulation signal is well understood as a barometer for characterizing spin current devices. Here, we develop a novel fabrication method for lateral spin valves based on ferromagnetic nanopillar structures using a multi-angle deposition technique. We demonstrate that the spin-accumulation signal is effectively enhanced by reducing the lateral dimension of the nonmagnetic spin channel. The obtained results can be quantitatively explained by the confinement of the spin reservoir by considering spin diffusion into the leads. The temperature dependence of the spin accumulation signal and the influence of the thermal spin injection under a high bias current are also discussed.

Seebeck Effect in Nanomagnets

We present a theory of the Seebeck effect in nanomagnets with dimensions smaller than the spin diffusion length, showing that the spin accumulation generated by a temperature gradient strongly affects the thermopower. We also identify a correction arising from the transverse temperature gradient induced by the anomalous Ettingshausen effect and an induced spin-heat accumulation gradient. The relevance of these effects for nanoscale magnets is illustrated by ab initio calculations on dilute magnetic alloys.on dilute magnetic alloys.

Enhanced Spin Accumulation in Semiconductor at Room Temperature Using Ni0.65Zn0.35Fe2O4(NZFO) as Spin Injector in NZFO/MgO/p-Si Device

In this article, the fabrication of a Ni0.65Zn0.35Fe2O4/MgO/p-Si heterostructure device has been optimized using the pulsed laser deposition (PLD) technique, and a detailed investigation of its structural, electrical, and magnetic features has been performed experimentally. The electronic and magneto-transport characteristics have been explored in the temperature range of 100–300 K. The current-voltage (I-V) characteristics of the heterojunction have been recorded, which displayed an excellent rectifying magnetic tunnel diode-like behavior throughout that temperature regime. The application of an external magnetic field parallel to the plane of the NZFO film causes the current (I) across the junction to decrease, clearly indicating positive junction magnetoresistance (JMR) of the heterostructure. The root of displaying positive magnetoresistance in our heterojunction has been well justified using the standard spin injection model. The electrical injection of spin-polarized carriers and its accumulation and detection in a p-Si channel have been demonstrated using the NZFO/MgO tunnel contact using a three-terminal (3-T) Hanle device. The parameters such as spin lifetime (99 ps), spin diffusion length (276 nm), and spin polarization (0.44) have been estimated from the Hanle curve detected in our heterostructure at room temperature, making the Ni0.65Zn0.35Fe2O4/MgO/p-Si device a very favorable promising junction structure in the field of spintronics for several device appliances in the future.

Spin Temperature and Dynamic Nuclear Polarization. From the History of Researches (1953 – 1983)

An attempt is proposed in the most concise form to provide the reader with a history of research and applications of dynamic nuclear polarization (DNP). The main attention is paid to the first three decades of DNP research, and the history of the discovery and development of multiparticle DNP and its relationship with the spin temperature approximation are outlined in some detail. The article emphasizes the role of such researchers as Anatol Abraham, Maurice Goldman, Michel Borghini, Thomas Wenckebach, Vadim Atsarkin, Boris Provotorov, Maya Rodak, Mortko Kozhushner, Levan Buishvili, Givi Khutsishvili. As far as possible, the contributions of many other scientists are considered. The establishment of a uniform temperature for nuclear spins due to the effect of spin diffusion was first proposed by Nicholas Blombergen in 1949. The content of the article is based on the bibliography available in the public domains, in particular on the memoirs of the research participants, and first of all on the materials of Atsarkin's 1978 review in Sov. Phys. Uspekhi and on the oral history of the development of the multiparticle concept of DNP effects, recorded from the speeches of the participants of the Moscow seminar "Problems of Magnetic Resonance" in 2001. A simplified description of the effects of DNP and a summary of the history of their discovery is given in section “Introduction”. The shortest biographical data and portraits of participants in the DNP study are given in Appendix 1, and a selected bibliography on the problems of DNP and spin temperatures is given in Appendix 2. The bibliography divided into four sections according to the time and type of publication (I - historical research, memoirs; II – monographs, reviews; III - original publications 1953 - 1983; IV – some original publications of a later time, mainly during the transformation of DNP into an method for the implementation of nuclear magnetic spectroscopy and tomography in the interests of chemistry, biochemistry and medicine). The widespread use of DNP methods is evidenced, for example, by the fact, that by now company Bruker BioSpin has installed about 50 gyrotron based spectrometers for DNP operating upto 593 GHz worldwide to date.

Rubrene Thin Films with Viably Enhanced Charge Transport Fabricated by Cryo-Matrix-Assisted Laser Evaporation

Among organic semiconductors, rubrene (RB; C42H28) is of rapidly growing interest for the development of organic and hybrid electronics due to exceptionally long spin diffusion length and carrier mobility up to 20 cm2V−1s−1 in single crystals. However, the fabrication of RB thin films resembling properties of the bulk remains challenging, mainly because of the RB molecule’s twisted conformation. This hinders the formation of orthorhombic crystals with strong π–π interactions that support the band transport. In this work, RB films with a high crystalline content were fabricated by matrix-assisted laser evaporation and the associated structure, composition, and transport properties are investigated. Enhanced charge transport is ascribed to the crystalline content of the film. Spherulitic structures are observed on top of an amorphous RB layer formed in the initial deposition stage. In spherulites, orthorhombic crystals dominate, as confirmed by X-ray diffraction and the absorption and Raman spectra. Surprisingly, nanowires several microns in length are also detected. The desorption/ionization mass and X-ray photoelectron spectra consistently show minimal material decomposition and absence of RB peroxides. The observed carrier mobility up to 0.13 cm2V−1s−1, is close to the technologically accepted level, making these rubrene films attractive for spintronic and optoelectronic applications.

Porous functionalized polymers enable generating and transporting hyperpolarized mixtures of metabolites

Hyperpolarization by dissolution dynamic nuclear polarization (dDNP) has enabled promising applications in spectroscopy and imaging, but remains poorly widespread due to experimental complexity. Broad democratization of dDNP could be realized by remote preparation and distribution of hyperpolarized samples from dedicated facilities. Here we show the synthesis of hyperpolarizing polymers (HYPOPs) that can generate radical- and contaminant-free hyperpolarized samples within minutes with lifetimes exceeding hours in the solid state. HYPOPs feature tunable macroporous porosity, with porous volumes up to 80% and concentration of nitroxide radicals grafted in the bulk matrix up to 285 μmol g−1. Analytes can be efficiently impregnated as aqueous/alcoholic solutions and hyperpolarized up to P(13C) = 25% within 8 min, through the combination of 1H spin diffusion and 1H → 13C cross polarization. Solutions of 13C-analytes of biological interest hyperpolarized in HYPOPs display a very long solid-state 13C relaxation times of 5.7 h at 3.8 K, thus prefiguring transportation over long distances.

Antiferromagnetic Oxide Thin Films for Spintronic Applications

Antiferromagnetic oxides have recently gained much attention because of the possibility to manipulate electrically and optically the Néel vectors in these materials. Their ultrafast spin dynamics, long spin diffusion length and immunity to large magnetic fields make them attractive candidates for spintronic applications. Additionally, there have been many studies on spin wave and magnon transport in single crystals of these oxides. However, the successful applications of the antiferromagnetic oxides will require similar spin transport properties in thin films. In this work, we systematically show the sputtering deposition method for two uniaxial antiferromagnetic oxides, namely Cr2O3 and α-Fe2O3, on A-plane sapphire substrates, and identify the optimized deposition conditions for epitaxial films with low surface roughness. We also confirm the antiferromagnetic properties of the thin films. The deposition method developed in this article will be important for studying the magnon transport in these epitaxial antiferromagnetic thin films.