Fabrication of long microchannels with circular cross section using astigmatically shaped femtosecond laser pulses and chemical etching

2006 ◽  
Vol 88 (19) ◽  
pp. 191107 ◽  
Author(s):  
Valeria Maselli ◽  
Roberto Osellame ◽  
Giulio Cerullo ◽  
Roberta Ramponi ◽  
Paolo Laporta ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Cross Section ◽  
Chemical Etching ◽  
Circular Cross Section ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses

Emission Behavior of Crystalline 1,4-Bis(4-phenylthiophene-2-yl)benzene Film Under Optical Excitation with Ultra Short Pulses

2016 ◽  
Vol 16 (4) ◽  
pp. 3262-3266
Author(s):  
Hiroyuki Mochizuki ◽  
Yoshizo Kawaguchi ◽  
Fumio Sasaki ◽  
Shu Hotta
Keyword(s):  
Femtosecond Laser ◽  
Cross Section ◽  
Vapor Deposition ◽  
Emission Cross Section ◽  
Optical Excitation ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses ◽  
Short Pulses ◽  
Laser Threshold ◽  
Emission Behavior

We evaluated emission behaviors of crystallized films of 1,4-bis(5-phenylthiophene-2-yl)benzene (AC5) in detail which was a representative thiophene/phenylene co-oligomer. The crystallized AC5 films were prepared by vapor deposition onto a substrate and thermal treatment. The AC5 films consisted of a crystalline domain with the size of several tens of micrometers. We used femtosecond laser pulses for the excitation of the AC5 films. As a result, the femtosecond laser pulses did not induce re-absorption above excitation energy densities of their laser threshold. The obtained gain value for AC5 crystallized film was large, over 150 cm-1. Furthermore, the emission cross section of the crystallized AC5 film was nearly 10-16 cm2.

Role of stress in the chemical etching of fused silica exposed to low-energy femtosecond laser pulses

2011 ◽  
Author(s):  
Audrey Champion ◽  
Yves Bellouard ◽  
Gecevicius Mindaugas ◽  
Martynas Beresna ◽  
Peter G. Kazansky
Keyword(s):  
Femtosecond Laser ◽  
Chemical Etching ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses ◽  
Fused Silica ◽  
Low Energy

scholarly journals Three-Dimensional Residue-Free Volume Removal inside Sapphire by High-Temperature Etching aftercmd="newline" Irradiation of Femtosecond Laser Pulses

2008 ◽  
Vol 2008 ◽  
pp. 1-4 ◽  
Author(s):  
Shigeki Matsuo ◽  
Kensuke Tokumi ◽  
Takuro Tomita ◽  
Shuichi Hashimoto
Keyword(s):  
High Temperature ◽  
Femtosecond Laser ◽  
Chemical Etching ◽  
Room Temperature ◽  
Three Dimensional ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses ◽  
Etching Technique ◽  
Selective Chemical ◽  
Selective Chemical Etching

We applied the femtosecond laser-assisted etching technique, that is, irradiation of focused femtosecond laser pulses followed by selective chemical etching, to volume removal inside sapphire. At room temperature, volume etching only slightly advanced while residue remained inside the volume. By increasing the etching temperature, complete volume etching without residue was achieved. Complete etching was, however, accompanied by undesirable phenomena of surface pits or cracks, which are expected to be excluded through further improvement of processing.

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