Application of the interface capacitance model to thin-film relaxors and ferroelectrics

Applied Physics Letters ◽

10.1063/1.2218321 ◽

2006 ◽

Vol 88 (26) ◽

pp. 262904 ◽

Author(s):

M. Tyunina ◽

J. Levoska

Keyword(s):

Thin Film ◽

Capacitance Model ◽

Interface Capacitance

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Response to “Comment on ‘Application of the interface capacitance model to thin-film relaxors and ferroelectrics’” [Appl. Phys. Lett. 89, 196101 (2006)]

Applied Physics Letters ◽

10.1063/1.2385632 ◽

2006 ◽

Vol 89 (19) ◽

pp. 196102 ◽

Author(s):

M. Tyunina ◽

J. Levoska

Keyword(s):

Thin Film ◽

Capacitance Model ◽

Interface Capacitance

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Comments on “Application of the interface capacitance model to thin film relaxors and ferroelectrics” [Appl. Phys. Lett. 88, 262904 (2006)]

Applied Physics Letters ◽

10.1063/1.2385627 ◽

2006 ◽

Vol 89 (19) ◽

pp. 196101 ◽

Author(s):

J. M. Gregg

Keyword(s):

Thin Film ◽

Capacitance Model ◽

Interface Capacitance

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Gate Capacitance Model of Polysilicon Thin Film Transistors

Chinese Journal of Liquid Crystals and Displays ◽

10.3788/yjyxs20112602.0178 ◽

2011 ◽

Vol 26 (2) ◽

pp. 178-182

Author(s):

邓婉玲 DENG Wan-ling

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Gate Capacitance ◽

Capacitance Model

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An analytical capacitance model for a hydrogenated amorphous silicon based thin-film transistor

Physics Procedia ◽

10.1016/j.phpro.2011.10.018 ◽

2011 ◽

Vol 21 ◽

pp. 122-127 ◽

Author(s):

Z. Hafdi

Keyword(s):

Thin Film ◽

Amorphous Silicon ◽

Thin Film Transistor ◽

Hydrogenated Amorphous Silicon ◽

Capacitance Model ◽

Silicon Based ◽

Hydrogenated Amorphous

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Contribution of interface capacitance to the electric-field breakdown in thin-film Al–AlOx–Al capacitors

Applied Physics Letters ◽

10.1063/1.1613802 ◽

2003 ◽

Vol 83 (12) ◽

pp. 2417-2419 ◽

Author(s):

Guneeta Singh-Bhalla ◽

Xu Du ◽

Arthur F. Hebard

Keyword(s):

Thin Film ◽

Electric Field ◽

Interface Capacitance

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Unified gate capacitance model of polysilicon thin-film transistors for circuit applications

The European Physical Journal Applied Physics ◽

10.1051/epjap:2008109 ◽

2008 ◽

Vol 43 (1) ◽

pp. 43-49 ◽

Author(s):

W. Deng ◽

X. Zheng ◽

R. Chen ◽

W. Wu ◽

Z. An

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Gate Capacitance ◽

Capacitance Model

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Capacitance Model for Thin-Film Transistors with Interface Traps

ECS Meeting Abstracts ◽

10.1149/ma2010-02/29/1839 ◽

2010 ◽

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Interface Traps ◽

Capacitance Model

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Improved base-collector depletion charge and capacitance model for SiGe HBT on thin-film SOI

Acta Physica Sinica ◽

10.7498/aps.60.118501 ◽

2011 ◽

Vol 60 (11) ◽

pp. 118501

Author(s):

Xu Xiao-Bo ◽

Zhang He-Ming ◽

Hu Hui-Yong

Keyword(s):

Thin Film ◽

Sige Hbt ◽

Capacitance Model

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Capacitance Model for Thin-Film Transistors with Interface Traps

ECS Transactions ◽

10.1149/1.3481224 ◽

2019 ◽

Vol 33 (5) ◽

pp. 105-109 ◽

Author(s):

Hiroshi Tsuji ◽

Yoshinari Kamakura ◽

Kenji Taniguchi

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Interface Traps ◽

Capacitance Model

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Full capacitance model, considering the specifics of amorphous oxide semiconductor thin film transistors structures

Solid-State Electronics ◽

10.1016/j.sse.2019.03.031 ◽

2019 ◽

Vol 156 ◽

pp. 16-22 ◽

Author(s):

A. Cerdeira ◽

M. Estrada ◽

Y. Hernandez-Barrios ◽

I. Hernandez ◽

B. Iñiguez

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Oxide Semiconductor ◽

Amorphous Oxide ◽

Amorphous Oxide Semiconductor ◽

Capacitance Model ◽

Semiconductor Thin Film

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