Hydrogen-nitrogen hybrid passivation treatment for growing high-property gate oxide films by high-temperature wet oxidation, with short-time NO POA, is proposed and demonstrated. Secondary ion mass spectroscopy (SIMS) measurements show that the proposed method causes hydrogen and appropriate nitrogen atoms to accumulate in Gaussian-like distributions near the SiO2/SiC interface. Moreover, the hydrogen atoms are also incorporated into the grown SiO2 layer, with a concentration of approximately 1 × 1019 cm−3. The conductance characteristics indicate that the induced hydrogen and nitrogen passivation atoms near the interface can effectively reduce the density of interface traps and near-interface traps. The current-voltage (I-V), X-ray photoelectron spectroscopy (XPS), and time-dependent bias stress (TDBS) with ultraviolet light (UVL) irradiation results demonstrate that the grown SiO2 film with the incorporated hydrogen passivation atoms can effectively reduce the density of oxide electron traps, leading to the barrier height being improved and the leakage current being reduced.
Influence of Hydrogen-Nitrogen Hybrid Passivation on the Gate Oxide Film of n-Type 4H-SiC MOS Capacitors
