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Photon number resolving detector based on a quantum dot field effect transistor
Applied Physics Letters
◽
10.1063/1.2735281
◽
2007
◽
Vol 90
(18)
◽
pp. 181114
◽
Cited By ~ 31
Author(s):
B. E. Kardynał
◽
S. S. Hees
◽
A. J. Shields
◽
C. Nicoll
◽
I. Farrer
◽
...
Keyword(s):
Quantum Dot
◽
Field Effect
◽
Field Effect Transistor
◽
Photon Number
◽
Effect Transistor
Download Full-text
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References
Photon-number-discriminating detection using a quantum-dot, optically gated, field-effect transistor
Nature Photonics
◽
10.1038/nphoton.2007.173
◽
2007
◽
Vol 1
(10)
◽
pp. 585-588
◽
Cited By ~ 76
Author(s):
E. J. Gansen
◽
M. A. Rowe
◽
M. B. Greene
◽
D. Rosenberg
◽
T. E. Harvey
◽
...
Keyword(s):
Quantum Dot
◽
Field Effect
◽
Field Effect Transistor
◽
Photon Number
◽
Effect Transistor
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Photon-number discrimination using a semiconductor quantum dot, optically gated, field-effect transistor
10.1117/12.734122
◽
2007
◽
Cited By ~ 2
Author(s):
Eric J. Gansen
◽
Mary A. Rowe
◽
Marion B. Greene
◽
Danna Rosenberg
◽
Todd E. Harvey
◽
...
Keyword(s):
Quantum Dot
◽
Field Effect
◽
Field Effect Transistor
◽
Photon Number
◽
Semiconductor Quantum Dot
◽
Number Discrimination
◽
Effect Transistor
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Photon-number-resolving capabilities of a semiconductor quantum dot, optically gated, field-effect transistor
2007 Conference on Lasers and Electro-Optics (CLEO)
◽
10.1109/qels.2007.4431640
◽
2007
◽
Author(s):
Eric J. Gansen
◽
Mary A. Rowe
◽
Marion Greene
◽
Danna Rosenberg
◽
Todd E. Harvey
◽
...
Keyword(s):
Quantum Dot
◽
Field Effect
◽
Field Effect Transistor
◽
Photon Number
◽
Semiconductor Quantum Dot
◽
Effect Transistor
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Surface Modification of CdSe Quantum-Dot Floating Gates for Advancing Light-Erasable Organic Field-Effect Transistor Memories
ACS Nano
◽
10.1021/acsnano.8b01413
◽
2018
◽
Vol 12
(8)
◽
pp. 7701-7709
◽
Cited By ~ 36
Author(s):
Yong Jin Jeong
◽
Dong-Jin Yun
◽
Sung Hoon Noh
◽
Chan Eon Park
◽
Jaeyoung Jang
Keyword(s):
Surface Modification
◽
Quantum Dot
◽
Field Effect
◽
Field Effect Transistor
◽
Organic Field Effect Transistor
◽
Floating Gates
◽
Cdse Quantum Dot
◽
Effect Transistor
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A tunable colloidal quantum dot photo field-effect transistor
Applied Physics Letters
◽
10.1063/1.3636438
◽
2011
◽
Vol 99
(10)
◽
pp. 101102
◽
Cited By ~ 18
Author(s):
Subir Ghosh
◽
Sjoerd Hoogland
◽
Vlad Sukhovatkin
◽
Larissa Levina
◽
Edward H. Sargent
Keyword(s):
Quantum Dot
◽
Field Effect
◽
Field Effect Transistor
◽
Colloidal Quantum Dot
◽
Effect Transistor
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Photojunction Field-Effect Transistor Based on a Colloidal Quantum Dot Absorber Channel Layer
ACS Nano
◽
10.1021/nn5053537
◽
2015
◽
Vol 9
(1)
◽
pp. 356-362
◽
Cited By ~ 49
Author(s):
Valerio Adinolfi
◽
Illan J. Kramer
◽
André J. Labelle
◽
Brandon R. Sutherland
◽
S. Hoogland
◽
...
Keyword(s):
Quantum Dot
◽
Field Effect
◽
Field Effect Transistor
◽
Channel Layer
◽
Colloidal Quantum Dot
◽
Effect Transistor
Download Full-text
Memory Operation of InAs Quantum Dot Field Effect Transistor
10.7567/ssdm.2000.d-4-5
◽
2000
◽
Author(s):
Heesoo Son
◽
Junggun Kim
◽
Moondeok Kim
◽
Songcheol Hong
Keyword(s):
Quantum Dot
◽
Field Effect
◽
Field Effect Transistor
◽
Effect Transistor
◽
Inas Quantum Dot
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Ge/Si quantum-dot metal–oxide–semiconductor field-effect transistor
Applied Physics Letters
◽
10.1063/1.1488688
◽
2002
◽
Vol 80
(25)
◽
pp. 4783-4785
◽
Cited By ~ 11
Author(s):
A. I. Yakimov
◽
A. V. Dvurechenskii
◽
V. V. Kirienko
◽
A. I. Nikiforov
Keyword(s):
Quantum Dot
◽
Metal Oxide
◽
Field Effect
◽
Field Effect Transistor
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Si Quantum Dot
◽
Effect Transistor
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Quantum Dot Made in Metal Oxide Silicon-Nanowire Field Effect Transistor Working at Room Temperature.
Nano Letters
◽
10.1021/nl504806s
◽
2015
◽
Vol 15
(5)
◽
pp. 2958-2964
◽
Cited By ~ 20
Author(s):
Romain Lavieville
◽
François Triozon
◽
Sylvain Barraud
◽
Andrea Corna
◽
Xavier Jehl
◽
...
Keyword(s):
Quantum Dot
◽
Metal Oxide
◽
Field Effect
◽
Room Temperature
◽
Field Effect Transistor
◽
Silicon Nanowire
◽
Effect Transistor
◽
Metal Oxide Silicon
◽
Made In
Download Full-text
Pseudosymmetric bias and correct estimation of Coulomb/confinement energy for unintentional quantum dot in channel of metal-oxide-semiconductor field-effect transistor
Applied Physics Letters
◽
10.1063/1.4827817
◽
2013
◽
Vol 103
(18)
◽
pp. 183107
◽
Cited By ~ 6
Author(s):
K. Ono
◽
T. Tanamoto
◽
T. Ohguro
Keyword(s):
Quantum Dot
◽
Metal Oxide
◽
Field Effect
◽
Field Effect Transistor
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Effect Transistor
◽
Correct Estimation
Download Full-text
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