floating gates
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2021 ◽  
Vol 3 (4) ◽  
pp. 1708-1718
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Ming-Yun Liao ◽  
Mohamed Hammad Elsayed ◽  
Chih-Li Chang ◽  
Yun-Chi Chiang ◽  
Wen-Ya Lee ◽  
...  


2020 ◽  
Vol 29 (6) ◽  
pp. 183-185
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Sang Hoon Shin ◽  
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2020 ◽  
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Sai Govinda Rao Nimmalapudi ◽  
Andrew Marshall ◽  
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2019 ◽  
Vol 4 (4) ◽  
pp. 044001 ◽  
Author(s):  
Mathew S Thomas ◽  
Kevin D Dorfman ◽  
C Daniel Frisbie
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2019 ◽  
Vol 11 (28) ◽  
pp. 25306-25312 ◽  
Author(s):  
Sung Hyun Kim ◽  
Sum-Gyun Yi ◽  
Myung Uk Park ◽  
ChangJun Lee ◽  
Myeongjin Kim ◽  
...  




ACS Nano ◽  
2018 ◽  
Vol 12 (12) ◽  
pp. 12945-12945
Author(s):  
Yong Jin Jeong ◽  
Dong-Jin Yun ◽  
Sung Hoon Noh ◽  
Chan Eon Park ◽  
Jaeyoung Jang


Author(s):  
Alexander A. Danilenko ◽  
Anton V. Strygin ◽  
Nikolay I. Mikhailov ◽  
Vadim V. Perepelovsky ◽  
Yaroslav N. Panichev ◽  
...  

The article is devoted to the modeling of a two-bit pin-diode. The possibility of programming opening time of the device based on the pin-diode is shown. The design consisting of a pin diode and two floating gates on the surface of i-region is considered. The addition of electrodes to the surface of the i-region makes it possible to regulate the concentration of electrons and holes within the larger limits in compare with the single-gate structure creating enriched and depleted are-as in the structure. Programming is carried out by applying the appropriate voltage to the control electrodes of the floating gates. It is shown that the charge generated on the floating gate changes characteristics of the i-region of the pin diode.The key elements of complex simulation of the two-gate pin diode are simulation of charge accumulation mechanism on the floating gate, simulation of pin-diode opening time and calibration of numerical model. Simulation is performed in Synopsys Sentaurus TCAD. Physical models describing traps and their parameters, particle tunneling, transport phenomena in dielectrics and amorphous films are used in simulation. As a result of modeling, the opening time dependences on size, floating gate location and floating gate charge magnitude are obtained.It is shown that the pin-diode 2-gate structures allow to change the opening time in a wider range than the single-gate ones. To program a large range of pin-diode opening times, it is 2 gate structure that is advisable to use. The obtained results indicate that it is possible to implement a two-bit programming pin-diode and expand its functionality.



2018 ◽  
Vol 10 (37) ◽  
pp. 31480-31487 ◽  
Author(s):  
Sum-Gyun Yi ◽  
Myung Uk Park ◽  
Sung Hyun Kim ◽  
Chang Jun Lee ◽  
Junyoung Kwon ◽  
...  


ACS Nano ◽  
2018 ◽  
Vol 12 (8) ◽  
pp. 7701-7709 ◽  
Author(s):  
Yong Jin Jeong ◽  
Dong-Jin Yun ◽  
Sung Hoon Noh ◽  
Chan Eon Park ◽  
Jaeyoung Jang


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