The weak antilocalization and quantum scattering time in a two-dimensional electron gas in AlGaN∕GaN heterostructure

2008 ◽  
Vol 92 (24) ◽  
pp. 242112 ◽  
Author(s):  
E. B. Olshanetsky ◽  
Z. D. Kvon ◽  
S. Sassine ◽  
J. C. Portal ◽  
H. I. Cho ◽  
...  
2014 ◽  
Vol 1058 ◽  
pp. 132-135
Author(s):  
Meng Lv ◽  
Guo Lin Yu ◽  
Yong Gang Xu ◽  
Tie Lin ◽  
Ning Dai ◽  
...  

Magnetotransport properties are investigated in two-dimensional electron gas (2DEG) of AlGaN/GaN heterostructure, including the Drude conductance, the Shubnikov-de Haas (SdH) oscillations and the change with temperature, the electron-electron interaction (EEI) and the change with temperature, the weak antilocalization (WAL) and the change with temperature etc.


2002 ◽  
Vol 80 (24) ◽  
pp. 4549-4551 ◽  
Author(s):  
S. R. Kurtz ◽  
A. A. Allerman ◽  
D. D. Koleske ◽  
G. M. Peake

2005 ◽  
Vol 475-479 ◽  
pp. 1787-1790
Author(s):  
J. Lu ◽  
B. Shen ◽  
N.J. Tang ◽  
D.J. Chen ◽  
Y.D. Zheng

The weak-localization of the two-dimensional electron gas (2DEG) in a modulation-doped Al0.22Ga0.78N/GaN single quantum well has been investigated through the magnetoresistance measurements. The elastic scattering time τε, dephasing time τφ and spin-orbit(s-o) scattering time τso at various temperatures are obtained. The fitting parameters indicate that the inelastic scatterings to the 2DEG are mainly due to the piezoelectric field and the alloy disorder in the AlxGa1-xN barrier. When the second subband in the triangular quantum well at the heterointerface is occupied by the 2DEG, the anti-weak localization is observed clearly, which is due to the strong spin-orbit interaction. The spin-orbit effect dominates the quantum correction of the conductivity in the upper subband. The intersubband scattering becomes stronger with increasing temperature.


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