Radioisotope microbattery based on liquid semiconductor

2009 ◽  
Vol 95 (1) ◽  
pp. 014103 ◽  
Author(s):  
T. Wacharasindhu ◽  
J. W. Kwon ◽  
D. E. Meier ◽  
J. D. Robertson
Keyword(s):  
Liquid Semiconductor

On the minimum size of metallic clusters in a liquid semiconductor system

1990 ◽  
Vol 2 (20) ◽  
pp. 4655-4660 ◽  
Author(s):  
M A Haghani ◽  
M Durrwachter ◽  
M von Hartrott ◽  
K Ott ◽  
D Quitmann
Keyword(s):  
Minimum Size ◽  
Metallic Clusters ◽  
Liquid Semiconductor ◽  
Semiconductor System

scholarly journals On the minimum size of metallic clusters in a liquid semiconductor system

1990 ◽  
Vol 2 (46) ◽  
pp. 9235-9235
Author(s):  
M A Haghani ◽  
M Dürrwächter ◽  
M von Hartrott ◽  
K Ott ◽  
D Quitmann
Keyword(s):  
Minimum Size ◽  
Metallic Clusters ◽  
Liquid Semiconductor ◽  
Semiconductor System

Monte Carlo and Molecular Dynamics Simulations of Liquid Semiconductor Surfaces

1997 ◽  
Vol 492 ◽  
Author(s):  
Zhiqiang Wang ◽  
Wenbin Yu ◽  
David Stroud
Keyword(s):  
Molecular Dynamics ◽  
Surface Tension ◽  
Monte Carlo ◽  
Direct Calculation ◽  
Free Energy Calculations ◽  
Liquid Semiconductors ◽  
Liquid Semiconductor ◽  
Surface Profiles ◽  
Dynamics Simulations ◽  
Three Body

ABSTRACTWe have numerically studied the surface tension and surface profiles of several liquid semiconductors, including Si, Ge, GaAs, CdTe, and their alloys, as a function of temperature and concentration. Two kinds of simulations have been carried out: direct free-energy calculations using Monte Carlo methods, and force summations using molecular dynamics. We use empirical two- and three-body interatomic interactions based on the form originally proposed by Stillinger and Weber for Si, in conjunction with simulation cell sizes ranging from 216 to as large as 8000 atoms and several novel numerical techniques including a direct calculation of the surface entropy. In the case of alloys, we find a striking segregation of the low-surface-tension component to the surface even when the alloy components are miscible at all concentrations.

Liquid MnTe: An example of a Mott-Hubbard liquid semiconductor

1985 ◽  
Vol 77-78 ◽  
pp. 1343-1346 ◽  
Author(s):  
A.C Barnes ◽  
J.E Enderby
Keyword(s):  
Liquid Semiconductor
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