The multiple‐trapping model and hole transport in SiO2

1977 ◽  
Vol 48 (9) ◽  
pp. 3819-3828 ◽  
Author(s):  
O. L. Curtis ◽  
J. R. Srour
Keyword(s):  
Hole Transport ◽  
Multiple Trapping ◽  
Multiple Trapping Model ◽  
Trapping Model

A multiple-trapping model with optical bias

1985 ◽  
Vol 52 (6) ◽  
pp. 1075-1095 ◽  
Author(s):  
R. Pandya ◽  
E. A. Schiff
Keyword(s):  
Multiple Trapping ◽  
Multiple Trapping Model ◽  
Trapping Model

Multiple-Trapping Model for the Charge Recombination Dynamics in Mesoporous-Structured Perovskite Solar Cells

ChemSusChem ◽  
2017 ◽  
Vol 10 (24) ◽  
pp. 4872-4878 ◽  
Author(s):  
Hao-Yi Wang ◽  
Yi Wang ◽  
Ming-Yang Hao ◽  
Yujun Qin ◽  
Li-Min Fu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Perovskite Solar Cells ◽  
Charge Recombination ◽  
Multiple Trapping ◽  
Multiple Trapping Model ◽  
Trapping Model ◽  
Recombination Dynamics

Optical Bias Enhanced Transient Photoconductivity in a-Si:H

1989 ◽  
Vol 149 ◽  
Author(s):  
Xing Chen ◽  
Chen-Yu Tai
Keyword(s):  
Room Temperature ◽  
Decay Constant ◽  
Experimental Result ◽  
Density Of State ◽  
Transient Photocurrent ◽  
Transient Photoconductivity ◽  
Multiple Trapping ◽  
Multiple Trapping Model ◽  
Trapping Model ◽  
Bias Level

ABSTRACTOptical bias enhancement in transient photocurrent, by a factor of more than 10, is observed in a-Si:H films. The transient photocurrent is found to decay exponentially shortly after the light pulse is turned off. The exponential decay constant of the transient current is found to be proportional to (optical bias level)−0.38 at room temperature. A theory based on the multiple trapping model is developed to explain the experimental result. This effect is applied to study the density of state of the sample as well as the process of charge recombination.

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