Solutions of q-deformed multiple-trapping model (MTM) for charge carrier transport from time-of-flight transient (TOF) photo-current in amorphous semiconductors

This paper is devoted to investigating the description of the q-deformed multiple-trapping equation for charge carrier transport in amorphous semiconductors. For this, we at first modified the multi–trapping model (MTM) of charge carriers in amorphous semiconductors from time-of-flight (TOF) transient photo-current in the framework of the q-derivative formalism, and then, we have constructed, our simulated current by using a method based on the Laplace method. This method is implemented in a program proposed recently by [14] which allows us to construct a current using the Padé approximation expansion.

A kinetic model for fluorescence microscopy experiments in disordered media that contains binding sites and obstacles

A model is proposed that describes the diffusion of molecules in a disordered medium with binding sites (traps) and obstacles (barriers). The equations of the model are obtained using the subordination method. As the parent process, random walks on a disordered lattice are taken, described by the random barriers model. As the leading process, the renewal process that corresponds to the multiple-trapping model is taken. Theoretical expressions are derived for the curves obtained in experiments using fluorescence microscopy (FRAP, FCS and SPT). Generalizations of the model are proposed, allowing to take into account correlations in the mutual arrangement of traps and barriers. The model can be used to find parameters characterizing the diffusion and binding properties of biomolecules in living cells.

Multiple-Trapping Model with Meyer-Neldel Effect and Field-Dependent Effects: Time-Of-Flight Simulations for a-Si:H

We have included both the Meyer-Neldel rule and field assisted detrapping in the multiple-trapping model, assuming exponential band tails of localized states. Monte Carlo simulations with fixed parameters provide transient currents and comparison of calculated and measured mobility, μ(T,F), and pre-transit dispersion parameter, α1(T,F), which are presented for temperatures ranging from 25 K to 333 K and fields from 20 kV/cm to 400 kV/cm. We observe that the values of μ1(T,F) and α(T,F) are improved with this combined model. Although this model provides satisfactory results for carrier transport for all temperature and field, differences in experimental data causes deviation of simulated results from experiment.