Dependence of the microstructure of amorphous silicon thin films prepared by planar rf magnetron sputtering on deposition parameters

1983 ◽  
Vol 54 (6) ◽  
pp. 3101-3105 ◽  
Author(s):  
S. R. Das ◽  
D. F. Williams ◽  
J. B. Webb
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Amorphous Silicon ◽  
Rf Magnetron Sputtering ◽  
Silicon Thin Films ◽  
Deposition Parameters

scholarly journals Influence of deposition parameters on the optical absorption of amorphous silicon thin films

2020 ◽  
Vol 2 (3) ◽  
Author(s):  
Lukas Terkowski ◽  
Iain W. Martin ◽  
Daniel Axmann ◽  
Malte Behrendsen ◽  
Felix Pein ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Absorption ◽  
Amorphous Silicon ◽  
Silicon Thin Films ◽  
Deposition Parameters

B-Doped Amorphous Silicon Thin Films Deposited on Flexible PET Substrate by Magnetron Sputtering

2015 ◽  
Vol 12 (9) ◽  
pp. 2931-2936 ◽  
Author(s):  
Kun Liu ◽  
Shulei Chen ◽  
Dechun Ba ◽  
Dongyang Wang ◽  
Yashuai Ba ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Amorphous Silicon ◽  
Silicon Thin Films ◽  
Pet Substrate

Conductivity of Yittria-Stabilized Zirconia Nanostructure Electrolyte for Solid Oxide Fuel Cell Application by Using RF Magnetron Sputtering

2017 ◽  
Vol 268 ◽  
pp. 352-357
Author(s):  
S.Y. Jaffar ◽  
Yussof Wahab ◽  
Rosnita Muhammad ◽  
Z. Othaman ◽  
Zuhairi Ibrahim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Stabilized Zirconia ◽  
Deposition Parameter ◽  
Deposition Parameters ◽  
Ysz Thin Film ◽  
Temperature Rate ◽  
Lower Temperature

Yttria-stabilized zirconia (YSZ) thin films were deposited successfully using RF magnetron sputtering. The substrate had been used are sapphire glass. A pure ceramic of Zr-Y is synthesized and processed into a planar magnetron target which is reactively sputtered with an Argon-Oxygen gas mixture to form Zr-Y-O nanostructure. The aim of this research is to study the conductivity and roughness YSZ thin film by using RF magnetron sputtering by varying the temperature deposition parameter. By lowering the YSZ thin film into nanostructure would enable for SOFC to be operate at lower temperature below 400°C. The YSZ nanostructure were controlled by varying the deposition parameters, including the deposition temperature and the substrate used. The crystalline of YSZ structure at 100W and temperature 300°C. The surface morphology of the films proved that at 300°C temperature rate deposition showed optimum growth morphology and density of YSZ thin films. Besides, the high deposition subtrate temperature affected the thickness of YSZ thin film at 80nm by using surface profiler. A higher rate of deposition is achievable when the sputtering mode of the Zr-Y target is metallic as opposed to oxide. YSZ is synthesizing to obtain the optimum thin film for SOFC application.

Annealing of Irreversible Defects in Hydrogenated and Unhydrogenated Amorphous Silicon Thin Films

1990 ◽  
Vol 192 ◽  
Author(s):  
G. N. Parsons ◽  
C. Wang ◽  
G. Lucovsky
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Amorphous Silicon ◽  
Time Constant ◽  
Annealing Time ◽  
Atomic Hydrogen ◽  
Characteristic Time ◽  
Silicon Thin Films ◽  
Anneal Time

ABSTRACTWe have prepared unhydrogenated and hydrogenated ([H] = 14 at.%) amorphous silicon thin films using magnetron sputtering with substrate temperature, TS = 40°C. After deposition, the films were annealed at temperatures between 150 and 200°C and conductivity was measured as a function of anneal time. We find that for that for both materials, the conductivity changes non-exponentially with annealing time. The characteristic time constant for annealing at 175°C is approximately the same in unhydrogenated films (τ≈100min) as found in films containing 14 atomic % hydrogen (τ≈200min).

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