Investigation into the effects of deposition parameters on TiO2 photocatalyst thin films by rf magnetron sputtering

Yttria-stabilized zirconia (YSZ) thin films were deposited successfully using RF magnetron sputtering. The substrate had been used are sapphire glass. A pure ceramic of Zr-Y is synthesized and processed into a planar magnetron target which is reactively sputtered with an Argon-Oxygen gas mixture to form Zr-Y-O nanostructure. The aim of this research is to study the conductivity and roughness YSZ thin film by using RF magnetron sputtering by varying the temperature deposition parameter. By lowering the YSZ thin film into nanostructure would enable for SOFC to be operate at lower temperature below 400°C. The YSZ nanostructure were controlled by varying the deposition parameters, including the deposition temperature and the substrate used. The crystalline of YSZ structure at 100W and temperature 300°C. The surface morphology of the films proved that at 300°C temperature rate deposition showed optimum growth morphology and density of YSZ thin films. Besides, the high deposition subtrate temperature affected the thickness of YSZ thin film at 80nm by using surface profiler. A higher rate of deposition is achievable when the sputtering mode of the Zr-Y target is metallic as opposed to oxide. YSZ is synthesizing to obtain the optimum thin film for SOFC application.

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Effect of RF magnetron sputtering parameters on the optimization of the discharge capacity of ternary lithium oxide thin films

10.21203/rs.3.rs-363697/v1 ◽

2021 ◽

Author(s):

Daniel Andres Sanchez Lopez ◽

Luciana Gomes Chagas ◽

Aline Domingues Batista ◽

Maria Gabriella Detone Guaita ◽

Luís Henrique Cardozo Amorin ◽

...

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Discharge Capacity ◽

Lithium Ion ◽

Rf Magnetron Sputtering ◽

Lithium Oxide ◽

Redox Potentials ◽

Charge Capacity ◽

Deposition Parameters ◽

The Impact

Abstract The increasing demand for lithium-ion batteries has stimulated the investigation of new compounds in order to reduce the costs and the toxicity of their cathodes. Materials constituted of ternary lithiated oxide compounds are a successful alternative to cobalt-rich cathodes. The main disadvantage of ternary compound materials (TCM) is that the maximum amount of electrical charge is only achieved at high redox potentials, a limiting factor if we consider the current development in electrolyte technology. In this work, we investigated the influence of sputtering deposition parameters on the charge capacity of TCM thin films, restraining their electrochemical potential to conventional values. To do so, we analyzed the impact that small changes in crystalline and morphological structures have on the charge capacity at low cell potentials. For this, we performed the RF magnetron sputtering of TCM thin films, and carried out a factorial design of experiments to investigate their electrochemical properties, while limiting the charging potential to 4.20 V vs. Li|Li+. The films were deposited onto a rigid and conductive substrate with different parameters (power and pressure at room temperature). Electrochemical results showed that the discharge capacity is strongly influenced by the deposition parameters, reaching 250 mAh g− 1 even at 4.20 V vs. Li. This value is superior to the ones of the conventional cobalt cathode and the bulk ternary electrode. Both deposition parameters exhibited a synergic dependency, which means that they need to be simultaneously varied for a response optimization. The discharge capacity of the analyzed samples was highly affected by the surface morphology of the film and its crystallographic properties, and not by its elemental composition. High discharge capacity was obtained without additional thermal treatments, which favors the manufacture of films over polymeric substrates for future electronic applications.

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Dependence of the microstructure of amorphous silicon thin films prepared by planar rf magnetron sputtering on deposition parameters

Journal of Applied Physics ◽

10.1063/1.332463 ◽

1983 ◽

Vol 54 (6) ◽

pp. 3101-3105 ◽

Cited By ~ 14

Author(s):

S. R. Das ◽

D. F. Williams ◽

J. B. Webb

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Amorphous Silicon ◽

Rf Magnetron Sputtering ◽

Silicon Thin Films ◽

Deposition Parameters

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Memory and Electrical Properties of (100)-Oriented AlN Thin Films Prepared by Radio Frequency Magnetron Sputtering

Journal of Nanomaterials ◽

10.1155/2014/250439 ◽

2014 ◽

Vol 2014 ◽

pp. 1-6 ◽

Cited By ~ 4

Author(s):

Maw-Shung Lee ◽

Sean Wu ◽

Shih-Bin Jhong ◽

Kai-Huang Chen ◽

Kuan-Ting Liu

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Magnetron Sputtering ◽

Radio Frequency ◽

Nitrogen Concentration ◽

Rf Magnetron Sputtering ◽

Chamber Pressure ◽

Deposition Parameters ◽

Xrd Patterns ◽

P Type

The (100)-oriented aluminum nitride (AlN) thin films were well deposited onto p-type Si substrate by radio frequency (RF) magnetron sputtering method. The optimal deposition parameters were the RF power of 350 W, chamber pressure of 9 mTorr, and nitrogen concentration of 50%. Regarding the physical properties, the microstructure of as-deposited (002)- and (100)-oriented AlN thin films were obtained and compared by XRD patterns and TEM images. For electrical properties analysis, we found that the memory windows of (100)-oriented AlN thin films are better than those of (002)-oriented thin films. Besides, the interface and interaction between the silicon and (100)-oriented AlN thin films was serious important problem. Finally, the current transport models of the as-deposited and annealed (100)-oriented AlN thin films were also discussed. From the results, we suggested and investigated that large memory window of the annealed (100)-oriented AlN thin films was induced by many dipoles and large electric field applied.

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