rf magnetron sputtering
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Author(s):  
Takumi Tominaga ◽  
Shinji Takayanagi ◽  
Takahiko Yanagitani

Abstract ScAlN films are currently being investigated for their potential use in surface acoustic wave (SAW) devices for next-generation mobile networks because of their high piezoelectricity. This paper describes the numerical simulation of SAW propagation in c-axis-tilted ScAlN films on silicon substrates and a fabrication technique for preparing c-axis-tilted ScAlN films on silicon substrates. The electromechanical coupling coefficient K 2 of SAW propagating in the ScAlN film/silicon substrate increased due to the c-axis tilt angle. The maximum K 2 value is approximately 3.90%. This value is 2.6 times the maximum K 2 value of the c-axis-oriented ScAlN film/silicon substrate structure. The c-axis-tilted ScAlN films with an Sc concentration of 40% were prepared on a silicon substrate via RF magnetron sputtering based on the self-shadowing effect, and the maximum c-axis tilt angle was 57.4°. These results indicate that this device structure has potential for SAW device applications with well-established micromachining technology derived from silicon substrates.


Nanomaterials ◽  
2022 ◽  
Vol 12 (2) ◽  
pp. 215
Author(s):  
Seokwon Lee ◽  
Yeon-Ho Joung ◽  
Yong-Kyu Yoon ◽  
Wonseok Choi

In this study, a four-inch zinc oxide (ZnO) nanostructure was synthesized using radio frequency (RF) magnetron sputtering to maximize the electrochemical performance of the anode material of a lithium-ion battery. All materials were grown on cleaned p-type silicon (100) wafers with a deposited copper layer inserted at the stage. The chamber of the RF magnetron sputtering system was injected with argon and oxygen gas for the growth of the ZnO films. A hydrogen (H2) reduction process was performed in a plasma enhanced chemical vapor deposition (PECVD) chamber to synthesize the ZnO nanostructure (ZnO NS) through modification of the surface structure of a ZnO film. Field emission scanning electron microscopy and atomic force microscopy were performed to confirm the surface and structural properties of the synthesized ZnO NS, and cyclic voltammetry was used to examine the electrochemical characteristics of the ZnO NS. Based on the Hall measurement, the ZnO NS subjected to H2 reduction had a higher electron mobility and lower resistivity than the ZnO film. The ZnO NS that was subjected to H2 reduction for 5 min and 10 min had average roughness of 3.117 nm and 3.418 nm, respectively.


Molecules ◽  
2022 ◽  
Vol 27 (2) ◽  
pp. 406
Author(s):  
May Tran Thi ◽  
Seokhun Kwon ◽  
Hyunil Kang ◽  
Jung-Hyun Kim ◽  
Yong-Kyu Yoon ◽  
...  

This research is conducted in order to investigate the structural and electrical characteristics of carbon nanowalls (CNWs) according to the sputtering time of interlayers. The thin films were deposited through RF magnetron sputtering with a 4-inch target (Ni and Ti) on the glass substrates, and the growth times of the deposition were 5, 10, and 30 min. Then, a microwave plasma-enhanced chemical vapor deposition (PECVD) system was used to grow CNWs on the interlayer-coated glass substrates by using a mixture of H2 and CH4 gases. The FE-SEM analysis of the cross-sectional and planar images confirmed that the thickness of interlayers linearly increased according to the deposition time. Furthermore, CNWs grown on the Ni interlayer were taller and denser than those grown on the Ti interlayer. Hall measurement applied to measure sheet resistance and conductivity confirmed that the electrical efficiency improved significantly as the Ni or Ti interlayers were used. Additionally, UV-Vis spectroscopy was also used to analyze the variations in light transmittance; CNWs synthesized on Ni-coated glass have lower average transmittance than those synthesized on Ti-coated glass. Based on this experiment, it was found that the direct growth of CNW was possible on the metal layer and the CNWs synthesized on Ni interlayers showed outstanding structural and electrical characterizations than the remaining interlayer type.


Crystals ◽  
2022 ◽  
Vol 12 (1) ◽  
pp. 78
Author(s):  
Nguentra Sucheewa ◽  
Winadda Wongwiriyapan ◽  
Annop Klamchuen ◽  
Michiko Obata ◽  
Masatsugu Fujishige ◽  
...  

This study successfully demonstrated the tailoring properties of hafnium nitride (HfN) thin films via reactive gas-timing (RGT) RF magnetron sputtering for surface-enhanced Raman spectroscopy (SERS) substrate applications. The optimal RGT sputtering condition was investigated by varying the duration time of the argon and nitrogen gas sequence. The RGT technique formed thin films with a grain size of approximately 15 nm. Additionally, the atomic ratios of nitrogen and hafnium can be controlled between 0.24 and 0.28, which is greater than the conventional technique, resulting in a high absorbance in the long wavelength region. Moreover, the HfN thin film exhibited a high Raman signal intensity with an EF of 8.5 × 104 to methylene blue molecules and was capable of being reused five times. A superior performance of HfN as a SERS substrate can be attributed to its tailored grain size and chemical composition, which results in an increase in the hot spot effect. These results demonstrate that the RGT technique is a viable method for fabricating HfN thin films with controlled properties at room temperature, which makes them an attractive material for SERS and other plasmonic applications.


2021 ◽  
Author(s):  
Qi-Liang Wang ◽  
Shi-Yang Fu ◽  
Si-Han He ◽  
Hai-Bo Zhang ◽  
Shao-Heng Cheng ◽  
...  

Abstract n-GaOx thin film is deposited on the single crystal boron doped diamond through RF magnetron sputtering to form a pn heterojunction. The n-GaOx thin film presents a small surface roughness and a large optical band gap of 4.85 eV. In addition, the band alignment is measured by using X-ray photoelectron spectroscopy to evaluate the heterojunction property. The GaOx/diamond heterojunction shows a type-II staggered band configuration with the valence and conduction band offsets are of 1.28 eV and 1.93 eV, respectively. Those results confirm the feasibility to use n-GaOx as termination structure for diamond power device.


Nanomaterials ◽  
2021 ◽  
Vol 12 (1) ◽  
pp. 19
Author(s):  
Simeon Simeonov ◽  
Anna Szekeres ◽  
Dencho Spassov ◽  
Mihai Anastasescu ◽  
Ioana Stanculescu ◽  
...  

Nitrogen-doped ZnO (ZnO:N) thin films, deposited on Si(100) substrates by RF magnetron sputtering in a gas mixture of argon, oxygen, and nitrogen at different ratios followed by Rapid Thermal Annealing (RTA) at 400 °C and 550 °C, were studied in the present work. Raman and photoluminescence spectroscopic analyses showed that introduction of N into the ZnO matrix generated defects related to oxygen and zinc vacancies and interstitials. These defects were deep levels which contributed to the electron transport properties of the ZnO:N films, studied by analyzing the current–voltage characteristics of metal–insulator–semiconductor structures with ZnO:N films, measured at 298 and 77 K. At the appliedtechnological conditions of deposition and subsequent RTA at 400 °C n-type ZnO:N films were formed, while RTA at 550 °C transformed the n-ZnO:N films to p-ZnO:N ones. The charge transport in both types of ZnO:N films was carried out via deep levels in the ZnO energy gap. The density of the deep levels was in the order of 1019 cm−3. In the temperature range of 77–298 K, the electron transport mechanism in the ZnO:N films was predominantly intertrap tunneling, but thermally activated hopping also took place.


Coatings ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 1561
Author(s):  
Carmen Steluta Ciobanu ◽  
Simona Liliana Iconaru ◽  
Daniela Predoi ◽  
Roxana-Doina Trușcă ◽  
Alina Mihaela Prodan ◽  
...  

In this study, we develop chitosan–hydroxyapatite (CS–HAp) composite layers that were deposited on Si substrates in radio frequency (RF) magnetron sputtering discharge in argon gas. The composition and structure of CS–HAp composite layers were investigated by analytical techniques, such as Fourier transform infrared spectroscopy (FT-IR), scanning electron microscopy (SEM), metallographic microscopy (MM), and atomic force microscopy (AFM). On the other hand, in the present study the second order derivative of FT-IR–ATR spectra, for compositional analyses of CS–HAp, were used. The SEM, MM, and AFM data have shown the formation of CS–HAp composite layers. The surface of CS–HAp composite layers showed uniform growth (at an Ar gas working pressure of p = 2 × 10−3 mbar). The surface of the CS–HAp composites coatings became more nanostructured, becoming granular as the gas pressure increased from 5 × 10−3 to 1.2 × 10−2 mbar. However, our studies revealed that the surface morphology of the CS–HAp composite layers varies with the Ar gas working pressure. At the same time, optical properties are slightly influenced by Ar pressure. Their unique physicochemical properties make them suitable for various applications in the biomedical field, if we consider the already proven antimicrobial properties of chitosan. The antifungal properties and the capacity of the CS–HAp composite layers to inhibit the development of fungal biofilms were also demonstrated using the Candida albicans ATCC 10231 (C. albicans) fungal strain.


Author(s):  
Sahadeb Ghosh ◽  
Mangala Nand ◽  
Rajiv Kamparath ◽  
Mukul Gupta ◽  
Devdatta M Phase ◽  
...  

Abstract Oriented thin films of β-(Ga1-xFex)2O3 have been deposited by RF magnetron sputtering on c-Al2O3 and GaN substrates. The itinerant character of Fe 3d states forming the top of the valence band (VB) of Fe substituted of β-Ga2O3 thin films has been determined from resonant photoelectron spectroscopy (RPES). Further, admixture of itinerant and localized character of these Fe 3d sates is obtained for larger binding energies i.e deeper of VB. The bottom of the conduction band (CB) for β-(Ga1-xFex)2O3 is also found to be strongly hybridized states involving Fe 3d and O 2p states as compared to that of Ga 4s in pristine β-Ga2O3. This suggests that β-Ga2O3 transforms from band like system to a charge transfer system with Fe substitution. Furthermore, the bandgap red shits with Fe composition, which has been found to be primarily related to the shift of the CB edge.


Author(s):  
Keisuke Nishimoto ◽  
Kohei Shima ◽  
Shigefusa F. Chichibu ◽  
Mutsumi Sugiyama

Abstract Epitaxial growths of NiO thin films were realized on (0001) sapphire and (100) MgO substrates by using a reactive RF magnetron sputtering method. The NiO epilayers grown on a (0001) sapphire exhibited the (111)-oriented double-domain structure, which comprised of a triangular and its inverted triangular grains. Meanwhile, the NiO epilayers on a (100) MgO exhibited the (100)-oriented single-domain structure, which comprised of quadrangular grains. The observed grain structures most likely reflect the growth planes of respective NiO epilayers, and, mixed crystals of NiO and MgO were present near the interface. Therefore, A (100) MgO substrate is suitable for obtaining a single-domain NiO epilayer, whereas a (0001) sapphire substrate is suitable for obtaining a NiO epilayer without interdiffusion between NiO and sapphire. These NiO epilayers will be expected for applying the physical properties evaluation using photoluminescence or Hall measurements, and the fabrication of electrical or optical devices.


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