Applicability of the van der Pauw–Hall measurement technique to implanted samples

1984 ◽  
Vol 55 (12) ◽  
pp. 4450-4451 ◽  
Author(s):  
Suman B. Iyer ◽  
Rajaram Nityananda ◽  
Vikram Kumar
2017 ◽  
Vol 12 (3) ◽  
pp. 231-235 ◽  
Author(s):  
Yashar Azizian-Kalandaragh ◽  
Farzad Sedaghatdoust-Bodagh ◽  
Ebrahim Alizadeh-Gheshlaghi ◽  
Ali Khodayari

2010 ◽  
Vol 645-648 ◽  
pp. 979-982 ◽  
Author(s):  
Liang Chun Yu ◽  
Kin P. Cheung ◽  
Vinayak Tilak ◽  
Greg Dunne ◽  
Kevin Matocha ◽  
...  

Low channel mobility is one of the biggest challenges to commercializing SiC MOSFETs. Accurate mobility measurement is essential for understanding the mechanisms that lead to low mobility. The most widely used effective mobility measurements overestimate the inversion charge for devices that have high level of defects. Mobility measured by the Hall effect is more accurate; however the conventional Hall mobility measurement is tedious. In this work, we demonstrate a wafer-level Hall measurement technique, which is simple and convenient to implement. With this method, extensive study of the mobility degradation is possible.


2010 ◽  
Vol 27 (6) ◽  
pp. 067203 ◽  
Author(s):  
Guo Yang ◽  
Liu Yac-Ping ◽  
Li Jun-Qiang ◽  
Zhang Sheng-Li ◽  
Mei Zeng-Xia ◽  
...  

2018 ◽  
Vol 63 (22) ◽  
pp. 1521-1526 ◽  
Author(s):  
Fangzhu Qing ◽  
Yang Shu ◽  
Linsen Qing ◽  
Yuting Niu ◽  
He Guo ◽  
...  

2008 ◽  
Vol 19 (10) ◽  
pp. 105106
Author(s):  
D W Koon ◽  
J R Ares ◽  
F Leardini ◽  
J F Fernández ◽  
I J Ferrer

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