Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes

2010 ◽  
Vol 96 (10) ◽  
pp. 101102 ◽  
Author(s):  
Hee Jin Kim ◽  
Suk Choi ◽  
Seong-Soo Kim ◽  
Jae-Hyun Ryou ◽  
P. Douglas Yoder ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Active Layer ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Light Emitting ◽  
Lattice Matched

Engineering last quantum barrier/electron blocking layer interface to improve green light-emitting diodes

2021 ◽  
Vol 53 (11) ◽  
Author(s):  
Munaza Munsif ◽  
Muhammad Usman ◽  
Abdur-Rehman Anwar ◽  
Sibghatullah Khan ◽  
Saad Rasheed ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Green Light ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Light Emitting ◽  
Layer Interface

scholarly journals High-performance InGaN-based green light-emitting diodes with quaternary InAlGaN/GaN superlattice electron blocking layer

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Vol 24 (11) ◽  
pp. 11387 ◽  
Author(s):  
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Da-Wei Lin ◽  
Chien-Rong Yu ◽  
Zhen-Yu Li ◽  
Yu-Kuang Liao ◽  
...  
Keyword(s):  
High Performance ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Light Emitting
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