Promotion of electron confinement and hole injection in GaN-based green light-emitting diodes with a hybrid electron blocking layer

2015 ◽  
Vol 48 (4) ◽  
pp. 045101 ◽  
Author(s):  
Peng Ren ◽  
Ning Zhang ◽  
Zhe Liu ◽  
Bin Xue ◽  
Jinmin Li ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Green Light ◽  
Hole Injection ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Light Emitting ◽  
Electron Confinement

Engineering last quantum barrier/electron blocking layer interface to improve green light-emitting diodes

2021 ◽  
Vol 53 (11) ◽  
Author(s):  
Munaza Munsif ◽  
Muhammad Usman ◽  
Abdur-Rehman Anwar ◽  
Sibghatullah Khan ◽  
Saad Rasheed ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Green Light ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Light Emitting ◽  
Layer Interface

scholarly journals High-performance InGaN-based green light-emitting diodes with quaternary InAlGaN/GaN superlattice electron blocking layer

2016 ◽  
Vol 24 (11) ◽  
pp. 11387 ◽  
Author(s):  
An-Jye Tzou ◽  
Da-Wei Lin ◽  
Chien-Rong Yu ◽  
Zhen-Yu Li ◽  
Yu-Kuang Liao ◽  
...  
Keyword(s):  
High Performance ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Light Emitting

Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer

2010 ◽  
Vol 97 (26) ◽  
pp. 261103 ◽  
Author(s):  
C. H. Wang ◽  
C. C. Ke ◽  
C. Y. Lee ◽  
S. P. Chang ◽  
W. T. Chang ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Efficiency Droop ◽  
Hole Injection ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Light Emitting
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