The effect of interposing thin oxide layers on the photovoltaic properties ofa‐Si:H solar cells II between the middlenandplayers of a tandem‐type cell

1988 ◽  
Vol 64 (1) ◽  
pp. 394-398 ◽  
Author(s):  
Yuichi Sakai ◽  
Keiichi Fukuyama ◽  
Michio Matsumura ◽  
Yoshihiro Nakato ◽  
Hiroshi Tsubomura
1988 ◽  
Vol 27 (Part 1, No. 6) ◽  
pp. 880-882 ◽  
Author(s):  
Yuichi Sakai ◽  
Keiichi Fukuyama ◽  
Michio Matsumura ◽  
Yoshihiro Nakato ◽  
Hiroshi Tsubomura

1980 ◽  
Vol 59 (2) ◽  
pp. 477-484 ◽  
Author(s):  
R. L. van Meirhaeghe ◽  
F. Cardon ◽  
W. P. Gomes
Keyword(s):  

2016 ◽  
Vol 16 (9) ◽  
pp. 1026-1029 ◽  
Author(s):  
Keisuke Ohdaira ◽  
Takafumi Oikawa ◽  
Koichi Higashimine ◽  
Hideki Matsumura

Author(s):  
Selina Olthof ◽  
Kai Brinkmann ◽  
Ting Hu ◽  
Klaus Meerholz ◽  
Thoams Riedl

2012 ◽  
Vol 7 (1) ◽  
Author(s):  
Ming-Cheng Kao ◽  
Hone-Zern Chen ◽  
San-Lin Young ◽  
Chen-Cheng Lin ◽  
Chung-Yuan Kung

2011 ◽  
Vol 2011 ◽  
pp. 1-10 ◽  
Author(s):  
Hashem Shahroosvand ◽  
Parisa Abbasi ◽  
Mohsen Ameri ◽  
Mohammad Reza Riahi Dehkordi

The metal complexes ( (phen)2(phendione))(PF6)2(1), [ (phen)(bpy)(phendione))(PF6)2(2), and ( (bpy)2(phendione))(PF6)2(3) (phen = 1,10-phenanthroline, bpy = 2,2′-bipyridine and phendione = 1,10-phenanthroline-5,6-dione) have been synthesized as photo sensitizers for ZnO semiconductor in solar cells. FT-IR and absorption spectra showed the favorable interfacial binding between the dye-molecules and ZnO surface. The surface analysis and size of adsorbed dye on nanostructure ZnO were further examined with AFM and SEM. The AFM images clearly show both, the outgrowth of the complexes which are adsorbed on ZnO thin film and the depression of ZnO thin film. We have studied photovoltaic properties of dye-sensitized nanocrystalline semiconductor solar cells based on Ru phendione complexes, which gave power conversion efficiency of (η) of 1.54% under the standard AM 1.5 irradiation (100 mW cm−2) with a short-circuit photocurrent density () of 3.42 mA cm−2, an open-circuit photovoltage () of 0.622 V, and a fill factor (ff) of 0.72. Monochromatic incident photon to current conversion efficiency was 38% at 485 nm.


2009 ◽  
Vol 15 (6) ◽  
pp. 1403-1412 ◽  
Author(s):  
Cheng-Wei Lee ◽  
Hsueh-Pei Lu ◽  
Chi-Ming Lan ◽  
Yi-Lin Huang ◽  
You-Ren Liang ◽  
...  

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