Catastrophic optical damage at front and rear facets of diode lasers

2010 ◽  
Vol 97 (23) ◽  
pp. 231101 ◽  
Author(s):  
Martin Hempel ◽  
Jens W. Tomm ◽  
Mathias Ziegler ◽  
Thomas Elsaesser ◽  
Nicolas Michel ◽  
...  
Keyword(s):  
Diode Lasers ◽  
Optical Damage

Defect evolution during catastrophic optical damage in 450-nm emitting InGaN/GaN diode lasers

2018 ◽  
Author(s):  
Robert Kernke ◽  
Harald König ◽  
Jens W. Tomm ◽  
Andreas Löffler ◽  
Bernhard Stojetz ◽  
...  
Keyword(s):  
Diode Lasers ◽  
Optical Damage ◽  
Defect Evolution

New approaches towards the understanding of the catastrophic optical damage process in in-plane diode lasers

2009 ◽  
Author(s):  
Jens W. Tomm ◽  
Mathias Ziegler ◽  
Vadim Talalaev ◽  
Clemens Matthiesen ◽  
Thomas Elsaesser ◽  
...  
Keyword(s):  
Diode Lasers ◽  
Optical Damage ◽  
New Approaches ◽  
Damage Process

Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs-based diode lasers

2011 ◽  
Vol 5 (3) ◽  
pp. 422-441 ◽  
Author(s):  
J.W. Tomm ◽  
M. Ziegler ◽  
M. Hempel ◽  
T. Elsaesser
Keyword(s):  
Diode Lasers ◽  
Fast Kinetics ◽  
Optical Damage ◽  
Kinetics Of

scholarly journals Near-field characteristics of broad area diode lasers during catastrophic optical damage failure

2012 ◽  
Author(s):  
Martin Hempel ◽  
Jens W. Tomm ◽  
Martina Baeumler ◽  
Helmer Konstanzer ◽  
Jayanta Mukherjee ◽  
...  
Keyword(s):  
Diode Lasers ◽  
Near Field ◽  
Broad Area ◽  
Optical Damage

Kinetics of Defect Propagation during the Catastrophic Optical Damage (COD) in Broad-Area Diode Lasers

2012 ◽  
Vol 725 ◽  
pp. 105-108 ◽  
Author(s):  
Jens W. Tomm ◽  
Martin Hempel ◽  
Thomas Elsaesser
Keyword(s):  
Laser Power ◽  
Initial Phase ◽  
Diode Lasers ◽  
Well Being ◽  
Broad Area ◽  
Optical Damage ◽  
Defect Pattern ◽  
Kinetics Of ◽  
Direct Inspection ◽  
Propagation Velocities

The initial phase of defect propagation in broad area diode lasers, which are affected by the catastrophic optical damage (COD) effect, is studied. The decay of laser power within the first several 100 ns is found to be determined by defect propagation. When analyzing different device designs, a correlation is found between defect propagation velocities and thermal resistances of the materials vicinal to the quantum well, being the main heat source. The findings are confirmed by direct inspection of the defect pattern in opened devices.

scholarly journals Microscopic Origins of Catastrophic Optical Damage in Diode Lasers

2013 ◽  
Vol 19 (4) ◽  
pp. 1500508-1500508 ◽  
Author(s):  
M. Hempel ◽  
J. W. Tomm ◽  
F. La Mattina ◽  
I. Ratschinski ◽  
M. Schade ◽  
...  
Keyword(s):  
Diode Lasers ◽  
Optical Damage

scholarly journals Catastrophic Optical Damage in Semiconductor Lasers: Physics and New Results on InGaN High‐Power Diode lasers

2021 ◽  
Author(s):  
Martin Hempel ◽  
Shabnam Dadgostar ◽  
Juan Jiménez ◽  
Robert Kernke ◽  
Astrid Gollhardt ◽  
...  
Keyword(s):  
Semiconductor Lasers ◽  
High Power ◽  
Diode Lasers ◽  
Optical Damage ◽  
Power Diode

Kinetics of catastrophic optical damage in GaN-based diode lasers

2015 ◽  
Vol 30 (7) ◽  
pp. 072001 ◽  
Author(s):  
Martin Hempel ◽  
Jens W Tomm ◽  
Bernhard Stojetz ◽  
Harald König ◽  
Uwe Strauss ◽  
...  
Keyword(s):  
Diode Lasers ◽  
Optical Damage ◽  
Kinetics Of
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