Defect evolution during catastrophic optical damage in 450-nm emitting InGaN/GaN diode lasers

Author(s):  
Robert Kernke ◽  
Harald König ◽  
Jens W. Tomm ◽  
Andreas Löffler ◽  
Bernhard Stojetz ◽  
...  
2011 ◽  
Vol 26 (7) ◽  
pp. 075020 ◽  
Author(s):  
Martin Hempel ◽  
Fabio La Mattina ◽  
Jens W Tomm ◽  
Ute Zeimer ◽  
Rolf Broennimann ◽  
...  

2010 ◽  
Vol 97 (23) ◽  
pp. 231101 ◽  
Author(s):  
Martin Hempel ◽  
Jens W. Tomm ◽  
Mathias Ziegler ◽  
Thomas Elsaesser ◽  
Nicolas Michel ◽  
...  
Keyword(s):  

2009 ◽  
Author(s):  
Jens W. Tomm ◽  
Mathias Ziegler ◽  
Vadim Talalaev ◽  
Clemens Matthiesen ◽  
Thomas Elsaesser ◽  
...  

2011 ◽  
Vol 5 (3) ◽  
pp. 422-441 ◽  
Author(s):  
J.W. Tomm ◽  
M. Ziegler ◽  
M. Hempel ◽  
T. Elsaesser

2012 ◽  
Author(s):  
Martin Hempel ◽  
Jens W. Tomm ◽  
Martina Baeumler ◽  
Helmer Konstanzer ◽  
Jayanta Mukherjee ◽  
...  

2012 ◽  
Vol 725 ◽  
pp. 105-108 ◽  
Author(s):  
Jens W. Tomm ◽  
Martin Hempel ◽  
Thomas Elsaesser

The initial phase of defect propagation in broad area diode lasers, which are affected by the catastrophic optical damage (COD) effect, is studied. The decay of laser power within the first several 100 ns is found to be determined by defect propagation. When analyzing different device designs, a correlation is found between defect propagation velocities and thermal resistances of the materials vicinal to the quantum well, being the main heat source. The findings are confirmed by direct inspection of the defect pattern in opened devices.


2013 ◽  
Vol 19 (4) ◽  
pp. 1500508-1500508 ◽  
Author(s):  
M. Hempel ◽  
J. W. Tomm ◽  
F. La Mattina ◽  
I. Ratschinski ◽  
M. Schade ◽  
...  
Keyword(s):  

Author(s):  
Martin Hempel ◽  
Shabnam Dadgostar ◽  
Juan Jiménez ◽  
Robert Kernke ◽  
Astrid Gollhardt ◽  
...  

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