A study of the role of dislocation density, indium composition on the radiative efficiency in InGaN/GaN polar and nonpolar light-emitting diodes using drift-diffusion coupled with a Monte Carlo method

2010 ◽  
Vol 108 (12) ◽  
pp. 124508 ◽  
Author(s):  
I-Lin Lu ◽  
Yuh-Renn Wu ◽  
Jasprit Singh
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Method ◽  
Dislocation Density ◽  
Light Emitting Diodes ◽  
Drift Diffusion ◽  
Light Emitting ◽  
Radiative Efficiency ◽  
Indium Composition

Unraveling the Role of Crystallization Dynamics on Luminescence Characteristics of Perovskite Light‐Emitting Diodes

2021 ◽  
pp. 2100023
Author(s):  
Kong‐Chao Shen ◽  
Jing‐Kun Wang ◽  
Yang Shen ◽  
Yan‐Qing Li ◽  
Ming‐Lei Guo ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting ◽  
Crystallization Dynamics ◽  
Luminescence Characteristics

Understanding the Role of Ion Migration in the Operation of Perovskite Light-Emitting Diodes by Transient Measurements

2020 ◽  
Vol 12 (43) ◽  
pp. 48845-48853
Author(s):  
Qi Dong ◽  
Juliana Mendes ◽  
Lei Lei ◽  
Dovletgeldi Seyitliyev ◽  
Liping Zhu ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Ion Migration ◽  
Light Emitting ◽  
Transient Measurements

Reduction of the threading edge dislocation density in AlGaN epilayers by GaN nucleation for efficient 350 nm light emitting diodes

2010 ◽  
Vol 247 (7) ◽  
pp. 1710-1712 ◽  
Author(s):  
Richard Gutt ◽  
Lutz Kirste ◽  
Thorsten Passow ◽  
Michael Kunzer ◽  
Klaus Köhler ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Edge Dislocation ◽  
Light Emitting Diodes ◽  
Light Emitting
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