InGaAs heterostructure formation in catalyst-free GaAs nanopillars by selective-area metal-organic vapor phase epitaxy

2010 ◽  
Vol 97 (24) ◽  
pp. 243102 ◽  
Author(s):  
J. N. Shapiro ◽  
A. Lin ◽  
P. S. Wong ◽  
A. C. Scofield ◽  
C. Tu ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Catalyst Free ◽  
Selective Area ◽  
Metal Organic

Kinetic Analysis of InN Selective Area Metal–Organic Vapor Phase Epitaxy

2008 ◽  
Vol 1 ◽  
pp. 071102 ◽  
Author(s):  
Tomonari Shioda ◽  
Masakazu Sugiyama ◽  
Yukihiro Shimogaki ◽  
Yoshiaki Nakano
Keyword(s):  
Kinetic Analysis ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Selective Area ◽  
Metal Organic

Catalyst-free growth of high-optical quality GaN nanowires by metal-organic vapor phase epitaxy

2011 ◽  
Vol 99 (25) ◽  
pp. 251910 ◽  
Author(s):  
X. J. Chen ◽  
B. Gayral ◽  
D. Sam-Giao ◽  
C. Bougerol ◽  
C. Durand ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Optical Quality ◽  
Vapor Phase Epitaxy ◽  
High Optical Quality ◽  
Organic Vapor ◽  
Gan Nanowires ◽  
Catalyst Free ◽  
Metal Organic ◽  
Free Growth

Selective Area Growth by Metal Organic Vapor Phase Epitaxy and Atomic Layer Epitaxy Using Ga2O3as a Novel Mask Layer

1999 ◽  
Vol 38 (Part 1, No. 3A) ◽  
pp. 1516-1520 ◽  
Author(s):  
Shingo Hirose ◽  
Akihiro Yoshida ◽  
Masaaki Yamaura ◽  
Kazuhiko Hara ◽  
Hiro Munekata
Keyword(s):  
Vapor Phase ◽  
Atomic Layer ◽  
Vapor Phase Epitaxy ◽  
Atomic Layer Epitaxy ◽  
Selective Area Growth ◽  
Organic Vapor ◽  
Mask Layer ◽  
Selective Area ◽  
Area Growth ◽  
Metal Organic

Selective area metal-organic vapor-phase epitaxy of InN, GaN and InGaN covering whole composition range

2009 ◽  
Vol 311 (10) ◽  
pp. 2809-2812 ◽  
Author(s):  
Tomonari Shioda ◽  
Masakazu Sugiyama ◽  
Yukihiro Shimogaki ◽  
Yoshiaki Nakano
Keyword(s):  
Vapor Phase ◽  
Composition Range ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Selective Area ◽  
Metal Organic

Dislocation filtering and polarity in the selective area growth of GaN nanowires by continuous-flow metal organic vapor phase epitaxy

2015 ◽  
Vol 9 (1) ◽  
pp. 015502 ◽  
Author(s):  
Pierre-Marie Coulon ◽  
Blandine Alloing ◽  
Virginie Brändli ◽  
Philippe Vennéguès ◽  
Mathieu Leroux ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Continuous Flow ◽  
Vapor Phase Epitaxy ◽  
Selective Area Growth ◽  
Organic Vapor ◽  
Gan Nanowires ◽  
Selective Area ◽  
Area Growth ◽  
Metal Organic

Single-wire photodetectors based on InGaN/GaN radial quantum wells in GaN wires grown by catalyst-free metal-organic vapor phase epitaxy

2011 ◽  
Vol 98 (23) ◽  
pp. 233107 ◽  
Author(s):  
A. De Luna Bugallo ◽  
L. Rigutti ◽  
G. Jacopin ◽  
F. H. Julien ◽  
C. Durand ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Single Wire ◽  
Organic Vapor ◽  
Catalyst Free ◽  
Metal Organic ◽  
Free Metal

Growth and Characterization of InGaAs Nanowires formed on GaAs(111)B by Selective-Area Metal Organic Vapor Phase Epitaxy

2009 ◽  
Author(s):  
M. Yoshimura ◽  
K. Tomioka ◽  
K. Hiruma ◽  
S. Hara ◽  
J. Motohisa ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Selective Area ◽  
Metal Organic
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