Very high purity InP layer grown by liquid‐phase epitaxy using erbium gettering

Measurements of minority carrier diffusion lengths for p-type and n-type GaAs were carried out using an electron beam induced current (EBIC) technique. The GaAs material was grown by liquid phase epitaxy (LPE) at the Australian Nuclear Science and Technology Organisation. The diffusion lengths measured for high purity p-type and n-type LPE-GaAs samples were observed to be longer than any previously reported.

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Electrical and optical properties of high purity In0.5Ga0.5P grown on GaAs by liquid phase epitaxy

Journal of Crystal Growth ◽

10.1016/0022-0248(86)90374-x ◽

1986 ◽

Vol 76 (2) ◽

pp. 299-304 ◽

Cited By ~ 27

Author(s):

Y.K. Su ◽

M.C. Wu ◽

C.Y. Chang ◽

K.Y. Cheng

Keyword(s):

Optical Properties ◽

Liquid Phase ◽

Liquid Phase Epitaxy ◽

High Purity ◽

Electrical And Optical Properties

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High purity InP and InGaAsP grown by liquid phase epitaxy

Journal of Crystal Growth ◽

10.1016/0022-0248(82)90467-5 ◽

1982 ◽

Vol 56 (2) ◽

pp. 475-484 ◽

Cited By ~ 44

Author(s):

L.W. Cook ◽

M.M. Tashima ◽

N. Tabatabaie ◽

T.S. Low ◽

G.E. Stillman

Keyword(s):

Liquid Phase ◽

Liquid Phase Epitaxy ◽

High Purity

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Identification and Sources of Impurities in InGaAs Grown by Liquid Phase Epitaxy

MRS Proceedings ◽

10.1557/proc-90-249 ◽

1986 ◽

Vol 90 ◽

Cited By ~ 1

Author(s):

D. G. Knight ◽

C. J. Miner ◽

A. Majeed

Keyword(s):

High Temperature ◽

Liquid Phase ◽

Low Temperature ◽

Liquid Phase Epitaxy ◽

High Purity ◽

Photoluminescence Spectra ◽

Donor And Acceptor ◽

Sulfur Containing ◽

Sulfur Containing Compounds ◽

Low Temperature Photoluminescence

ABSTRACTHigh purity In.53 Ga.47 As and InP with carrier concentrations [ND–NA] < 5×1015 cm−3 has been grown by the LPE technique on both n-type and semi-insulating substrates to detect and identify trace donor and acceptor impurities. Acceptor impurities have been detected in low temperature photoluminescence spectra where LPE melt baking and growth programs indicate a melt origin for two of these species, one of which is zinc. Data from semiconductor profiles provides evidence for sulfur and tin donor impurities, which comes from the rinse melt used to etch back substrates doped with the respective contaminants. Silicon and sulfur contaminants have been detected by SIMS measurements; and may arise not only from the indium and III-V materials, but also the graphite boat used to grow the epilayers. Volatile sulfur-containing compounds have been detected during high temperature bake-out of high purity graphite boats.

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