Minority Carrier Diffusion Lengths for High Purity Liquid Phase Epitaxial GaAs

Australian Journal of Physics ◽

10.1071/ph930317 ◽

1993 ◽

Vol 46 (2) ◽

pp. 317 ◽

Author(s):

KSA Butcher ◽

D Alexiev ◽

TL Tansley

Keyword(s):

Electron Beam ◽

Liquid Phase ◽

Liquid Phase Epitaxy ◽

High Purity ◽

Minority Carrier ◽

Induced Current ◽

Carrier Diffusion ◽

Nuclear Science ◽

Electron Beam Induced Current ◽

Measurements of minority carrier diffusion lengths for p-type and n-type GaAs were carried out using an electron beam induced current (EBIC) technique. The GaAs material was grown by liquid phase epitaxy (LPE) at the Australian Nuclear Science and Technology Organisation. The diffusion lengths measured for high purity p-type and n-type LPE-GaAs samples were observed to be longer than any previously reported.

Download Full-text

Minority Carrier Diffusion Length in AlGaN: A Combined Electron Beam Induced Current and Transmission Microscopy Study

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.63-64.139 ◽

1998 ◽

Vol 63-64 ◽

pp. 139-146 ◽

Author(s):

A. Cremades ◽

M. Albrecht ◽

Axel Voigt ◽

J. Krinke ◽

R. Dimitrov ◽

...

Keyword(s):

Electron Beam ◽

Minority Carrier ◽

Diffusion Length ◽

Microscopy Study ◽

Induced Current ◽

Transmission Microscopy ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion ◽

Electron Beam Induced Current

Download Full-text

Depth profiling of the minority‐carrier diffusion length in intrinsically gettered silicon by electron‐beam‐induced current

Journal of Applied Physics ◽

10.1063/1.339942 ◽

1988 ◽

Vol 63 (5) ◽

pp. 1569-1579 ◽

Author(s):

C. Donolato ◽

M. Kittler

Keyword(s):

Electron Beam ◽

Minority Carrier ◽

Diffusion Length ◽

Depth Profiling ◽

Induced Current ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion ◽

Electron Beam Induced Current

Download Full-text

Determination of the minority carrier diffusion length in compositionally graded Cu(In,Ga)Se2 solar cells using electron beam induced current

Applied Physics Letters ◽

10.1063/1.3291046 ◽

2010 ◽

Vol 96 (2) ◽

pp. 022104 ◽

Author(s):

Gregory Brown ◽

Vladimir Faifer ◽

Alex Pudov ◽

Sergey Anikeev ◽

Eugene Bykov ◽

...

Keyword(s):

Electron Beam ◽

Solar Cells ◽

Minority Carrier ◽

Diffusion Length ◽

Induced Current ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion ◽

Electron Beam Induced Current

Download Full-text

Comments on ‘‘Measurements of minority‐carrier diffusion length in n‐CuInSe2 by electron‐beam‐induced current method’’ [J. Appl. Phys. 66, 5412 (1989)]

Journal of Applied Physics ◽

10.1063/1.346295 ◽

1990 ◽

Vol 68 (7) ◽

pp. 3759-3759

Author(s):

Keung L. Luke

Keyword(s):

Electron Beam ◽

Minority Carrier ◽

Diffusion Length ◽

Current Method ◽

Induced Current ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion ◽

Electron Beam Induced Current

Download Full-text

Mapping of crystal defects and the minority carrier diffusion length in 6H–SiC using a novel electron beam induced current technique

Journal of Applied Physics ◽

10.1063/1.368578 ◽

1998 ◽

Vol 84 (7) ◽

pp. 3986-3992 ◽

Author(s):

M. Tabib-Azar ◽

S. M. Hubbard ◽

C. M. Schnabel ◽

S. Bailey

Keyword(s):

Electron Beam ◽

Minority Carrier ◽

Diffusion Length ◽

Crystal Defects ◽

Induced Current ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion ◽

Current Technique ◽

Electron Beam Induced Current

Download Full-text

Determination of minority‐carrier diffusion length by integral properties of electron‐beam‐induced current profiles

Journal of Applied Physics ◽

10.1063/1.349454 ◽

1991 ◽

Vol 70 (4) ◽

pp. 2163-2168 ◽

Author(s):

D. Cavalcoli ◽

A. Cavallini ◽

A. Castaldini

Keyword(s):

Electron Beam ◽

Minority Carrier ◽

Diffusion Length ◽

Induced Current ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion ◽

Electron Beam Induced Current

Download Full-text

Evaluation of the minority carrier diffusion length by means of electron beam induced current and Monte Carlo simulation in AlGaAs and GaAs p-i-n solar cells

Semiconductor Science and Technology ◽

10.1088/0268-1242/10/5/010 ◽

1995 ◽

Vol 10 (5) ◽

pp. 627-633 ◽

Author(s):

E Grunbaum ◽

E Napchan ◽

Z Barkay ◽

K Barnham ◽

J Nelson ◽

...

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Electron Beam ◽

Solar Cells ◽

Minority Carrier ◽

Diffusion Length ◽

Induced Current ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion ◽

Electron Beam Induced Current

Download Full-text

Minority Carrier Diffusion Lengths in Silicon Doped Gallium Nitride Thin Films Measured by Electron Beam Induced Current

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.82-84.807 ◽

2001 ◽

Vol 82-84 ◽

pp. 807-0 ◽

Author(s):

C. Grazzi ◽

M. Albrecht ◽

Horst P. Strunk ◽

Z. Bougrioua ◽

I. Moerman

Keyword(s):

Electron Beam ◽

Gallium Nitride ◽

Minority Carrier ◽

Induced Current ◽

Carrier Diffusion ◽

Electron Beam Induced Current ◽

Download Full-text

Erratum: ‘‘Depth profiling of the minority‐carrier diffusion length in intrinsically gettered silicon by electron‐beam‐induced current’’ [J. Appl. Phys. 63, 1569 (1988)]

Journal of Applied Physics ◽

10.1063/1.342528 ◽

1988 ◽

Vol 64 (6) ◽

pp. 3330-3330

Author(s):

C. Donolato ◽

M. Kittler

Keyword(s):

Electron Beam ◽

Minority Carrier ◽

Diffusion Length ◽

Depth Profiling ◽

Induced Current ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion ◽

Electron Beam Induced Current

Download Full-text

Evaluation of minority carrier diffusion length of undoped n-BaSi2epitaxial thin films on Si(001) substrates by electron-beam-induced-current technique

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.078004 ◽

2014 ◽

Vol 53 (7) ◽

pp. 078004 ◽

Author(s):

Masakazu Baba ◽

Kentaro Watanabe ◽

Kosuke O. Hara ◽

Kaoru Toko ◽

Takashi Sekiguchi ◽

...

Keyword(s):

Electron Beam ◽

Minority Carrier ◽

Diffusion Length ◽

Induced Current ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion ◽

Current Technique ◽

Electron Beam Induced Current

Download Full-text